公开(公告)号：US09543428B2

公开(公告)日：2017-01-10

申请号：US14400365

申请日：2013-06-06

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto

发明人： Yuichi Takeuchi ,  Naohiro Suzuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L21/82 ,  H01L29/66 ,  H01L29/10 ,  H01L29/872 ,  H01L21/04 ,  H01L21/306 ,  H01L21/308 ,  H01L29/423 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/861

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

摘要翻译： SiC半导体器件具有包含低浓度区域和填充在形成于单元区域的沟槽中的高浓度区域的p型区域。 由低浓度区域提供p型列，并且由高浓度区域提供p +型深层。 因此，由于可以通过由n型漂移层提供的p型列和n型列来形成SJ结构，所以可以降低导通电阻。 由于漏极电位可以被p +型深层阻挡，所以在关断时，施加到栅极绝缘膜的电场可以减轻，从而可以限制栅极绝缘膜的破裂。 因此，SiC半导体器件可以实现导通电阻的降低和栅极绝缘膜的破损的限制。

公开(公告)号：US20150236127A1

公开(公告)日：2015-08-20

申请号：US14415752

申请日：2013-08-06

申请人： Jun MORIMOTO ,  DENSO CORPORATION

发明人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L21/04 ,  H01L21/28 ,  H01L29/04 ,  H01L29/16 ,  H01L21/306

CPC分类号： H01L29/66734 ,  H01L21/049 ,  H01L21/28158 ,  H01L21/30604 ,  H01L29/045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7813

摘要： In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench.

摘要翻译： 在制造包括具有沟槽栅极结构的垂直开关元件的碳化硅半导体器件的方法中，通过使用相对于（0001）面或（000-1）面具有偏离角的衬底，使用沟槽 由源极区域的表面形成为通过基底区域到达漂移层的深度，使得沟槽的侧壁表面面向（11-20）面或（1-100）面，并且栅极氧化物 在形成沟槽之后不形成牺牲氧化膜。

公开(公告)号：US09793376B2

公开(公告)日：2017-10-17

申请号：US14415752

申请日：2013-08-06

申请人： DENSO CORPORATION ,  Jun Morimoto

发明人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L31/0312 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L29/423 ,  H01L21/306 ,  H01L21/04 ,  H01L21/28 ,  H01L29/04 ,  H01L29/10

CPC分类号： H01L29/66734 ,  H01L21/049 ,  H01L21/28158 ,  H01L21/30604 ,  H01L29/045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7813

摘要： In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench.

公开(公告)号：US09818860B2

公开(公告)日：2017-11-14

申请号：US15365150

申请日：2016-11-30

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto

发明人： Yuichi Takeuchi ,  Naohiro Suzuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L21/82 ,  H01L29/417 ,  H01L29/66 ,  H01L29/10 ,  H01L29/872 ,  H01L21/04 ,  H01L21/306 ,  H01L21/308 ,  H01L29/423 ,  H01L21/761 ,  H01L29/15 ,  H01L29/06 ,  H01L29/08 ,  H01L29/861

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

公开(公告)号：US20150115286A1

公开(公告)日：2015-04-30

申请号：US14400365

申请日：2013-06-06

申请人： Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Akitaka SOENO ,  Jun MORIMOTO ,  DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi Takeuchi ,  Naohiro Suzuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/308 ,  H01L29/10 ,  H01L21/04 ,  H01L21/306 ,  H01L29/66 ,  H01L29/16

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

摘要翻译： SiC半导体器件具有包含低浓度区域和填充在形成于单元区域的沟槽中的高浓度区域的p型区域。 由低浓度区域提供p型列，并且由高浓度区域提供p +型深层。 因此，由于可以通过由n型漂移层提供的p型列和n型列来形成SJ结构，所以可以降低导通电阻。 由于漏极电位可以被p +型深层阻挡，所以在关断时，施加到栅极绝缘膜的电场可以减轻，从而可以限制栅极绝缘膜的破裂。 因此，SiC半导体器件可以实现导通电阻的降低和栅极绝缘膜的破损的限制。

公开(公告)号：US08812062B2

公开(公告)日：2014-08-19

申请号：US11902450

申请日：2007-09-21

申请人： Yoshikazu Hata ,  Tomoko Honda ,  Satoru Honda ,  Nobuyoshi Kuroiwa ,  Masaomi Nakahata ,  Jun Morimoto ,  Koichi Sato ,  Akihiro Tsujimura ,  Makoto Tabata ,  Minoru Sakurai ,  Shoji Kato

发明人： Yoshikazu Hata ,  Tomoko Honda ,  Satoru Honda ,  Nobuyoshi Kuroiwa ,  Masaomi Nakahata ,  Jun Morimoto ,  Koichi Sato ,  Akihiro Tsujimura ,  Makoto Tabata ,  Minoru Sakurai ,  Shoji Kato

IPC分类号： H04M1/00

CPC分类号： H05K7/06 ,  H01Q1/22 ,  H01Q1/243 ,  H01Q1/40 ,  H01Q9/0407

摘要： An electronic apparatus includes: a first molded body; a second molded body which composes housing with the first molded body; a first conductive pattern provided in the housing; a second conductive pattern provided on an outer surface of the housing; and a first conductive member. The first conductive member passes through a gap of a mating face between the first molded body and the second molded body. The first conductive member connects the first conductive pattern and the second conductive pattern.

摘要翻译： 电子设备包括：第一成型体; 第二成型体，其与第一成型体构成壳体; 设置在所述壳体中的第一导电图案; 设置在所述壳体的外表面上的第二导电图案; 和第一导电构件。 第一导电构件穿过第一模制体和第二模制体之间的配合面的间隙。 第一导电构件连接第一导电图案和第二导电图案。

公开(公告)号：US08710586B2

公开(公告)日：2014-04-29

申请号：US13229892

申请日：2011-09-12

申请人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/66 ,  H01L29/15

CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068

摘要： A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

摘要翻译： SiC半导体器件包括：依次堆叠的衬底，漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。 高浓度第二源区比低浓度第一源区浅，并且具有被层间绝缘膜覆盖的部分，其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。 第二部分上的金属硅化物膜的厚度大于第一部分。

公开(公告)号：US08262267B2

公开(公告)日：2012-09-11

申请号：US12453516

申请日：2009-05-13

申请人： Tsuyoshi Tsuda ,  Jun Morimoto

发明人： Tsuyoshi Tsuda ,  Jun Morimoto

IPC分类号： B60Q1/26 ,  B60R1/12

CPC分类号： B60R1/1207 ,  B62J6/02

摘要： A lamp device-integrated rearview mirror 30 includes a mirror member 34 oriented toward the rear side of a vehicle body and a single bulb 40 provided in a housing 31 attached to the vehicle body. The lamp device-integrated rearview mirror may also include a reflecting member 35 configured to reflect the light emitted from the bulb 40 toward the rear side of the vehicle body and a reflector 36 configured to reflect the light toward the front side of the vehicle body. The reflecting member 35 may be provided on the rear side of a lens 32 attached to the housing 31 to transmit the irradiation light, and the reflector 36 may be provided inside the housing 31. The mirror member 34 may be fitted in the opening portion of the housing 31.

摘要翻译： 灯装置集成后视镜30包括朝向车体后侧定向的镜构件34和设置在安装在车身上的壳体31中的单个灯泡40。 灯装置集成后视镜还可以包括被配置为将从灯泡40发射的光朝向车体的后侧反射的反射部件35和被构造成将光反射到车身前侧的反射器36。 反射构件35可以设置在附接到壳体31的透镜32的后侧，以透射照射光，并且反射器36可以设置在壳体31的内部。反射镜构件34可以装配在 外壳31。

公开(公告)号：US20120061682A1

公开(公告)日：2012-03-15

申请号：US13229892

申请日：2011-09-12

申请人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/24 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068

摘要： A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

摘要翻译： SiC半导体器件包括：依次堆叠的衬底，漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。 高浓度第二源区比低浓度第一源区浅，并且具有被层间绝缘膜覆盖的部分，其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。 第二部分上的金属硅化物膜的厚度大于第一部分。

公开(公告)号：US08054240B2

公开(公告)日：2011-11-08

申请号：US11902448

申请日：2007-09-21

申请人： Tomoko Honda ,  Nobuyoshi Kuroiwa ,  Masaomi Nakahata ,  Jun Morimoto ,  Satoru Honda ,  Yoshikazu Hata ,  Koichi Sato ,  Akihiro Tsujimura ,  Makoto Tabata ,  Minoru Sakurai ,  Shoji Kato

发明人： Tomoko Honda ,  Nobuyoshi Kuroiwa ,  Masaomi Nakahata ,  Jun Morimoto ,  Satoru Honda ,  Yoshikazu Hata ,  Koichi Sato ,  Akihiro Tsujimura ,  Makoto Tabata ,  Minoru Sakurai ,  Shoji Kato

IPC分类号： H01Q1/24 ,  H01Q1/40

CPC分类号： H01Q9/40 ,  H01Q9/42 ,  H01Q21/28 ,  H05K1/0284 ,  H05K1/144 ,  H05K3/325 ,  H05K2201/048 ,  H05K2201/0999 ,  H05K2203/167

摘要： An electronic apparatus includes: a housing provided with a first conductive pattern; a substrate provided with a first wiring layer in a surface thereof and fixed to the housing; and a first conductive member connecting the first conductive pattern and the first wiring layer. The first conductive pattern extends onto an outer surface and an inner surface of the housing. The first conductive member is in contact with each of at least a part of the first conductive pattern extending onto the inner surface and an end of the first wiring layer. Alternatively, an electronic apparatus includes: a housing provided with a conductive pattern and having a through part in a frame portion thereof; and a substrate provided with a wiring layer on a surface thereof and having a protruding part and fixed to the housing. The protruding part and the through part are fit. The conductive pattern extends onto an outer surface of the housing and onto an inner surface of the through part. At least some of the conductive pattern extending onto the inner surface is in contact with an end of the wiring layer.

摘要翻译： 电子设备包括：具有第一导电图案的壳体; 基板，其在其表面上设置有第一布线层并固定到所述壳体; 以及连接第一导电图案和第一布线层的第一导电构件。 第一导电图案延伸到壳体的外表面和内表面上。 第一导电构件与延伸到第一布线层的内表面和端部的第一导电图案的至少一部分中的每一个接触。 或者，电子设备包括：壳体，设置有导电图案，并且在其框架部分中具有通孔部分; 以及在其表面上设置有布线层并且具有突出部并固定到壳体的基板。 突出部分和贯穿部分是合适的。 导电图案延伸到壳体的外表面上并延伸到通孔的内表面上。 延伸到内表面上的至少一些导电图案与布线层的端部接触。