Invention Application
- Patent Title: LOW-K SPACER FOR RMG FINFET FORMATION
- Patent Title (中): 用于RMG FINFET形成的低K隔板
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Application No.: US14191751Application Date: 2014-02-27
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Publication No.: US20150243760A1Publication Date: 2015-08-27
- Inventor: Hong He , Chiahsun Tseng , Tenko Yamashita , Chun-Chen Yeh , Yunpeng Yin
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/08
Abstract:
A method for semiconductor fabrication includes providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels. Dummy spacers are formed along a periphery of the mask layers. A dummy gate structure is formed between the dummy spacers. The dummy spacers are removed to provide a recess. Low-k spacers are formed in the recess.
Public/Granted literature
- US09543407B2 Low-K spacer for RMG finFET formation Public/Granted day:2017-01-10
Information query
IPC分类:
