发明申请
US20150247063A1 Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof
有权
化学机械抛光（CMP）组合物用于浅沟槽隔离（STI）应用及其制备方法
- 专利标题： Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof
- 专利标题（中）： 化学机械抛光（CMP）组合物用于浅沟槽隔离（STI）应用及其制备方法
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申请号： US14709609申请日： 2015-05-12
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公开(公告)号： US20150247063A1公开(公告)日： 2015-09-03
- 发明人: Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
- 申请人： AIR PRODUCTS AND CHEMICALS, INC.
- 申请人地址： US PA Allentown
- 专利权人： AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人： AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人地址： US PA Allentown
- 主分类号： C09G1/02
- IPC分类号： C09G1/02 ; H01L21/3105 ; H01L21/762
摘要：
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.