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1.发明申请Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof 有权化学机械抛光（CMP）组合物用于浅沟槽隔离（STI）应用及其制备方法公开(公告)号：US20150247063A1
公开(公告)日：2015-09-03
申请号：US14709609
申请日：2015-05-12
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： C09G1/02 , H01L21/3105 , H01L21/762
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译： 应用用于从氧化铈颗粒中除去，还原或处理痕量金属污染物和较小的细小二氧化铈颗粒的方法，用于浅沟槽隔离（STI）工艺的氧化铈浆料或化学机械抛光（CMP）组合物。 使用经处理的化学机械抛光（CMP）组合物或通过使用经处理的氧化铈颗粒或经处理的氧化铈浆料制备的CMP抛光组合物来抛光至少包含用于STI的二氧化硅膜表面的衬底（浅沟槽隔离 ）处理和应用。 已经观察到由于痕量金属离子污染物的减少和在浅沟槽隔离（STI）CMP抛光中减少了非常小的细小的氧化铈颗粒）而减少的纳米尺寸颗粒相关缺陷。
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公开(公告)号：US20160177134A1
公开(公告)日：2016-06-23
申请号：US15058268
申请日：2016-03-02
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
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3.发明授权Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof 有权用于浅沟槽隔离（STI）应用的化学机械抛光（CMP）组合物及其制备方法公开(公告)号：US09305476B2
公开(公告)日：2016-04-05
申请号：US14709609
申请日：2015-05-12
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： H01L21/302 , G09G1/02 , C09K3/14 , H01L21/3105 , H01L21/762 , B24B1/00 , C01F17/00
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译： 应用用于从氧化铈颗粒中除去，还原或处理痕量金属污染物和较小的细小二氧化铈颗粒的方法，用于浅沟槽隔离（STI）工艺的氧化铈浆料或化学机械抛光（CMP）组合物。 使用经处理的化学机械抛光（CMP）组合物或通过使用处理的氧化铈颗粒或经处理的氧化铈浆料制备的CMP抛光组合物来抛光至少包含用于STI的二氧化硅膜表面的衬底（浅沟槽隔离 ）处理和应用。 已经观察到由于痕量金属离子污染物的减少和在浅沟槽隔离（STI）CMP抛光中减少了非常小的细小的氧化铈颗粒）而减少的纳米尺寸颗粒相关缺陷。
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公开(公告)号：US20140273458A1
公开(公告)日：2014-09-18
申请号：US14142087
申请日：2013-12-27
IPC分类号： H01L21/306 , C09G1/02
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212
摘要： Chemical mechanical polishing (CMP) compositions for polishing tungsten or tungsten-containing substrates comprise an abrasive, at least one solid catalyst, a chemical additive selected from the groups consisting of piperazine derivatives, salts of cyanate, and combinations thereof; and a liquid carrier. Systems and processes use the aqueous formulations for polishing tungsten or tungsten-containing substrates.
摘要翻译： 用于抛光钨或含钨衬底的化学机械抛光（CMP）组合物包括研磨剂，至少一种固体催化剂，选自哌嗪衍生物，氰酸盐及其组合的化学添加剂; 和液体载体。 系统和方法使用水性制剂来抛光含钨或钨的基材。
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5.发明申请Metal Compound Chemically Anchored Colloidal Particles and Methods of Production and Use Thereof 审中-公开金属化合物化学锚定胶体颗粒及其生产和使用方法公开(公告)号：US20160280962A1
公开(公告)日：2016-09-29
申请号：US15070590
申请日：2016-03-15
CPC分类号： C09G1/02 , C07F15/02 , C09K3/1445 , C09K3/1463 , H01L21/3212
摘要： Metal compound chemically anchored colloidal particles wherein the metal compound is in molecular form are disclosed. A facile and fast process to chemically anchor metal compounds uniformly onto colloidal particle surfaces via chemical bonding has been developed. Metal compounds are chemically anchored to the surface of colloidal particles via an organic linking agent. Uniformly distributed metal compounds remain in molecular form after the process. The metal compound chemically anchored colloidal particles can be used as solid catalyst in metal chemical-mechanical planarization process.
摘要翻译： 公开了金属化合物化学锚定的胶体颗粒，其中金属化合物是分子形式。 已经开发了一种通过化学键合将金属化合物均匀地均匀地粘附到胶体颗粒表面上的简便且快速的方法。 金属化合物通过有机连接剂化学锚定到胶体颗粒的表面。 在工艺过程之后，均匀分布的金属化合物保持分子形式。 化学锚定的胶体颗粒的金属化合物可用作金属化学机械平面化工艺中的固体催化剂。
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6.发明申请Composite Abrasive Particles For Chemical Mechanical Planarization Composition and Method of Use Thereof 审中-公开用于化学机械平面化的复合研磨颗粒组合物及其使用方法公开(公告)号：US20160200944A1
公开(公告)日：2016-07-14
申请号：US14993128
申请日：2016-01-12
发明人： Hongjun Zhou , Jo-Ann Theresa Schwartz , Malcolm Grief , Xiaobo Shi , Krishna P. Murella , Steven Charles Winchester , John Edward Quincy Hughes , Mark Leonard O'Neill , Andrew J. Dodd , Dnyanesh Chandrakant Tamboli , Reinaldo Mario Machado
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1436 , C09K3/1445 , H01L21/31053
摘要： Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.
摘要翻译： 包含二氧化铈涂覆二氧化硅颗粒的复合颗粒的化学机械平面化（CMP）抛光组合物提供低凹陷，低缺陷和高的抛光氧化膜去除率。 化学机械平面化（CMP）抛光组合物使用柔软的抛光垫显示出优异的性能。
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7.发明授权Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof 有权用于浅沟槽隔离（STI）应用的化学机械抛光（CMP）组合物及其制备方法公开(公告)号：US09062230B2
公开(公告)日：2015-06-23
申请号：US14482590
申请日：2014-09-10
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steve Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： B44C1/22 , C09G1/02 , C09K3/14 , H01L21/3105 , B24B1/00 , C01F17/00 , H01L21/762
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译： 应用用于从氧化铈颗粒中除去，还原或处理痕量金属污染物和较小的细小二氧化铈颗粒的方法，用于浅沟槽隔离（STI）工艺的氧化铈浆料或化学机械抛光（CMP）组合物。 使用经处理的化学机械抛光（CMP）组合物或通过使用经处理的氧化铈颗粒或经处理的氧化铈浆料制备的CMP抛光组合物用于抛光至少含有用于STI的二氧化硅膜表面的衬底（浅沟槽隔离 ）处理和应用。 已经观察到由于痕量金属离子污染物的减少和在浅沟槽隔离（STI）CMP抛光中减少了非常小的细小的氧化铈颗粒）而减少的纳米尺寸颗粒相关缺陷。
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8.发明授权Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof 有权用于浅沟槽隔离（STI）应用的化学机械抛光（CMP）组合物及其制备方法公开(公告)号：US08859428B2
公开(公告)日：2014-10-14
申请号：US14030657
申请日：2013-09-18
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steve Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： H01L21/302 , H01L21/3105 , C09G1/02 , C09K3/14 , C01F17/00
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译： 应用用于从氧化铈颗粒中除去，还原或处理痕量金属污染物和较小的细小二氧化铈颗粒的方法，用于浅沟槽隔离（STI）工艺的氧化铈浆料或化学机械抛光（CMP）组合物。 使用经处理的化学机械抛光（CMP）组合物或通过使用经处理的氧化铈颗粒或经处理的氧化铈浆料制备的CMP抛光组合物用于抛光至少含有用于STI的二氧化硅膜表面的衬底（浅沟槽隔离 ）处理和应用。 已经观察到由于痕量金属离子污染物的减少和在浅沟槽隔离（STI）CMP抛光中减少了非常小的细小的氧化铈颗粒）而减少的纳米尺寸颗粒相关缺陷。
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9.发明授权公开(公告)号：US10160884B2
公开(公告)日：2018-12-25
申请号：US15070590
申请日：2016-03-15
IPC分类号： C09G1/02 , C07F15/02 , C09K3/14 , H01L21/321
摘要： Metal compound chemically anchored colloidal particles wherein the metal compound is in molecular form are disclosed. A facile and fast process to chemically anchor metal compounds uniformly onto colloidal particle surfaces via chemical bonding has been developed. Metal compounds are chemically anchored to the surface of colloidal particles via an organic linking agent. Uniformly distributed metal compounds remain in molecular form after the process. The metal compound chemically anchored colloidal particles can be used as solid catalyst in metal chemical-mechanical planarization process.
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10.发明授权公开(公告)号：US10109493B2
公开(公告)日：2018-10-23
申请号：US14993128
申请日：2016-01-12
发明人： Hongjun Zhou , Jo-Ann Theresa Schwartz , Malcolm Grief , Xiaobo Shi , Krishna P. Murella , Steven Charles Winchester , John Edward Quincy Hughes , Mark Leonard O'Neill , Andrew J. Dodd , Dnyanesh Chandrakant Tamboli , Reinaldo Mario Machado
IPC分类号： C09K13/00 , H01L21/306 , C09G1/02 , H01L21/3105 , C09K3/14
摘要： Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.
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