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    Chemical mechanical polishing (CMP) of cobalt-containing substrate
    1.
    发明授权
    Chemical mechanical polishing (CMP) of cobalt-containing substrate 有权

    公开(公告)号：US10217645B2

    公开(公告)日：2019-02-26

    申请号：US14800323

    申请日：2015-07-15

    申请人： AIR PRODUCTS AND CHEMICALS, INC.

    发明人： Xiaobo Shi ,  James Allen Schlueter ,  Mark Leonard O'Neill

    IPC分类号： H01L21/311 ,  C09G1/02

    摘要： Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.

    Chemical Mechanical Polishing (CMP) of Colbalt-Containing Substrate
    7.
    发明申请
    Chemical Mechanical Polishing (CMP) of Colbalt-Containing Substrate 审中-公开
    含有金属基质的化学机械抛光（CMP）

    公开(公告)号：US20160027657A1

    公开(公告)日：2016-01-28

    申请号：US14800323

    申请日：2015-07-15

    申请人： AIR PRODUCTS AND CHEMICALS, INC.

    发明人： Xiaobo Shi ,  James Allen Schlueter ,  Mark Leonard O'Neill

    IPC分类号： H01L21/311 ,  C09G1/02

    CPC分类号： H01L21/31111 ,  C09G1/02

    摘要： Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.

    摘要翻译： 提供了用于抛光含钴或钴的基材的化学机械抛光（CMP）组合物，方法和系统。 在CMP抛光组合物中使用双重或至少两种螯合剂作为络合剂，用于实现独特的协同效应，以提供高的Co，可调谐的Co去除率和在Co膜表面具有低静态蚀刻速率，以便在CMP过程中实现有效的Co腐蚀保护 。 钴化学机械抛光组合物还提供非常高的Co膜与Ta，TaN，Ti和TiN等其它阻挡层的选择性，以及介电膜，如TEOS，SiNx，low-k和超低k 电影。

    Chemical mechanical polishing composition having chemical additives and methods for using same
    10.
    发明授权
    Chemical mechanical polishing composition having chemical additives and methods for using same 有权
    具有化学添加剂的化学机械抛光组合物及其使用方法

    公开(公告)号：US08999193B2

    公开(公告)日：2015-04-07

    申请号：US13832234

    申请日：2013-03-15

    申请人： Air Products and Chemicals, Inc.

    发明人： Xiaobo Shi ,  James Allen Schlueter ,  Maitland Gary Graham ,  Savka I. Stoeva ,  James Matthew Henry

    IPC分类号： H01L21/306 ,  C09G1/02 ,  H01L21/3105

    CPC分类号： H01L21/30625 ,  C09G1/02 ,  H01L21/31053

    摘要： Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; optionally an oxidizing agent; a pH buffering agent and salt; a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for “SiC”, SiN” and “SiCxNy” films; and tunable removal selectivity for “SiC” in reference to SiO2, “SiN” in reference to SiO2, “SiC” in reference to “SiN”, or “SiCxNy” in reference to SiO2; wherein x ranges from 0.1 wt % to 55 wt %, y ranges from 0.1 wt % to 32 wt %.

    摘要翻译： 公开了含有化学添加剂的化学机械抛光（CMP）组合物和使用CMP组合物的方法。 CMP组合物包括研磨剂; 化学添加剂; 液体载体 任选的氧化剂; pH缓冲剂和盐; 表面活性剂和杀生物剂。 CMP组合物和方法提供了“SiC”，SiN“和”SiCxNy“膜的增强的去除速率; 对于参考SiO 2的“SiC”的可调谐去除选择性，参考SiO 2的“SiN”，关于SiO 2的“SiN”或“SiC x N y”参考SiO 2;“SiC” 其中x为0.1重量％至55重量％，y为0.1重量％至32重量％。