Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US14637542Application Date: 2015-03-04
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Publication No.: US20150255139A1Publication Date: 2015-09-10
- Inventor: Tomoaki ATSUMI , Shuhei NAGATSUKA , Tamae MORIWAKA , Yuta ENDO
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2014-045406 20140307
- Main IPC: G11C11/24
- IPC: G11C11/24 ; H01L27/115 ; H01L27/12 ; H01L29/24 ; H01L29/786

Abstract:
[Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≧2, the jth sub memory cell is arranged over the j−1th sub memory cell.
Public/Granted literature
- US09653611B2 Semiconductor device Public/Granted day:2017-05-16
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