利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.019 秒)

    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200343251A1

    公开(公告)日：2020-10-29

    申请号：US16810902

    申请日：2020-03-06

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tomoaki ATSUMI ,  Shuhei NAGATSUKA ,  Tamae MORIWAKA ,  Yuta ENDO

    IPC分类号： H01L27/115 ,  H01L29/786 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/06 ,  G11C7/16 ,  G11C8/14 ,  G11C11/403 ,  G11C11/408 ,  G11C11/24 ,  H01L29/24

    摘要： [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≥2, the jth sub memory cell is arranged over the j−1th sub memory cell.

    Electrical Appliance
    2.
    发明申请
    Electrical Appliance 审中-公开
    电器

    公开(公告)号：US20140370184A1

    公开(公告)日：2014-12-18

    申请号：US14471906

    申请日：2014-08-28

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Yasuhiko Takemura ,  Tamae MORIWAKA

    IPC分类号： H01M4/1393 ,  B29B15/00

    CPC分类号： H01M4/1393 ,  B29B15/00 ,  H01M4/366 ,  H01M4/60 ,  H01M4/625 ,  H01M4/661 ,  H01M2004/021

    摘要： An object is to increase the conductivity of an electrode including active material particles and the like, which is used for a battery. Two-dimensional carbon including 1 to 10 graphenes is used as a conduction auxiliary agent, instead of a conventionally used conduction auxiliary agent extending only one-dimensionally at most, such as graphite particles, acetylene black, or carbon fibers. A conduction auxiliary agent extending two-dimensionally has higher probability of being in contact with active material particles or other conduction auxiliary agents, so that the conductivity can be improved.

    摘要翻译： 目的在于提高用于电池的包含活性物质粒子等的电极的导电性。 使用包含1至10个石墨烯的二维碳作为导电助剂，而不是常规使用的至多一维延伸的导电助剂如石墨颗粒，乙炔黑或碳纤维。 导电辅助剂二维延伸具有与活性材料颗粒或其它导电助剂接触的可能性较高，从而可提高导电性。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150255139A1

    公开(公告)日：2015-09-10

    申请号：US14637542

    申请日：2015-03-04

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tomoaki ATSUMI ,  Shuhei NAGATSUKA ,  Tamae MORIWAKA ,  Yuta ENDO

    IPC分类号： G11C11/24 ,  H01L27/115 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786

    CPC分类号： H01L27/115 ,  G11C7/16 ,  G11C8/14 ,  G11C11/24 ,  G11C11/403 ,  G11C11/4085 ,  H01L27/0688 ,  H01L27/11551 ,  H01L27/1156 ,  H01L29/24 ,  H01L29/7869

    摘要： [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≧2, the jth sub memory cell is arranged over the j−1th sub memory cell.

    摘要翻译： 提供适于小型化的半导体器件。 提供高度可靠的半导体器件。 提供具有改善的操作速度的半导体器件。 [解决方案]一种半导体器件，包括第一至第C（c是2个或更多个的自然数）子存储单元的存储单元，其中：第j子存储单元包括第一晶体管，第二晶体管和电容器; 包括在第一晶体管中的第一半导体层和包括在第二晶体管中的第二半导体层包括氧化物半导体; 电容器的端子之一电连接到包括在第二晶体管中的栅电极; 包括在第二晶体管中的栅电极电连接到包括在第一晶体管中的源电极和漏极之一; 并且当j≥2时，第j个子存储单元布置在第j-1个子存储单元上。

    LITHIUM-ION SECONDARY BATTERY
    6.
    发明申请
    LITHIUM-ION SECONDARY BATTERY 审中-公开

    公开(公告)号：US20190165370A1

    公开(公告)日：2019-05-30

    申请号：US16263134

    申请日：2019-01-31

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Shunpei YAMAZAKI ,  Tomoya FUTAMURA ,  Tamae MORIWAKA

    IPC分类号： H01M4/36 ,  H01M10/0525 ,  H01M4/131 ,  H01M4/485 ,  H01M4/58 ,  H01M4/587 ,  H01M4/136 ,  H01M4/133 ,  H01M4/62

    摘要： To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector.

    SECONDARY BATTERY
    8.
    发明公开
    SECONDARY BATTERY 审中-公开

    公开(公告)号：US20230361271A1

    公开(公告)日：2023-11-09

    申请号：US18218248

    申请日：2023-07-05

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Shunpei YAMAZAKI ,  Teppei OGUNI ,  Tamae MORIWAKA ,  Junpei MOMO ,  Ryota TAJIMA ,  Nobuhiro INOUE

    IPC分类号： H01M4/133 ,  H01M4/587 ,  H01M4/36

    CPC分类号： H01M4/133 ,  H01M4/587 ,  H01M4/366

    摘要： A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode.

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210398988A1

    公开(公告)日：2021-12-23

    申请号：US17466442

    申请日：2021-09-03

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tomoaki ATSUMI ,  Shuhei NAGATSUKA ,  Tamae MORIWAKA ,  Yuta ENDO

    IPC分类号： H01L27/115 ,  H01L29/786 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/06 ,  G11C7/16 ,  G11C8/14 ,  G11C11/403 ,  G11C11/408 ,  G11C11/24 ,  H01L29/24

    摘要： [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.
    [Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≥2, the jth sub memory cell is arranged over the j-lth sub memory cell.

    SECONDARY BATTERY
    10.
    发明申请
    SECONDARY BATTERY 审中-公开

    公开(公告)号：US20200321605A1

    公开(公告)日：2020-10-08

    申请号：US16904618

    申请日：2020-06-18

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Shunpei YAMAZAKI ,  Teppei OGUNI ,  Tamae MORIWAKA ,  Junpei MOMO ,  Ryota TAJIMA ,  Nobuhiro INOUE

    IPC分类号： H01M4/133 ,  H01M4/587 ,  H01M4/36

    摘要： A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode.