公开(公告)号：US20230093689A1

公开(公告)日：2023-03-23

申请号：US17990855

申请日：2022-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yuta ENDO ,  Yoko TSUKAMOTO

IPC: H01L29/786 ,  H01L29/423

Abstract: To provide a miniaturized transistor having highly stable electrical characteristics. Furthermore, also in a semiconductor device including the transistor, high performance and high reliability are achieved. The transistor includes, over a substrate, a conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region and a second region. The resistance of the second region is lower than that of the first region. The entire surface of the first region in the oxide semiconductor is surrounded in all directions by the conductor with the insulator interposed therebetween.

公开(公告)号：US20210119052A1

公开(公告)日：2021-04-22

申请号：US16759020

申请日：2018-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Yuta ENDO ,  Naoki OKUNO

IPC: H01L29/786 ,  H01L29/22 ,  H01L27/108

Abstract: A semiconductor material is an oxide including a metal element and nitrogen, in which the metal element is indium (In), an element M (M is aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn)), and zinc (Zn) and nitrogen is taken into an oxygen vacancy or bonded to an atom of the metal element.

公开(公告)号：US20200279851A1

公开(公告)日：2020-09-03

申请号：US16645665

申请日：2018-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Hideomi SUZAWA

IPC: H01L27/105 ,  H01L29/786 ,  H01L23/528 ,  H01L27/02 ,  H01L29/24 ,  H01L29/66

Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, and an electrode. The first transistor and the second transistor include an oxide, a gate insulator over the oxide, and a gate. The electrode is connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor. The channel length of the first transistor is longer than the short side of the first conductor. The channel length of the second transistor is longer than the short side of the second conductor.

公开(公告)号：US20190115455A1

公开(公告)日：2019-04-18

申请号：US16209023

申请日：2018-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/786 ,  H01L21/425 ,  H01L21/02 ,  H01L29/423 ,  H01L21/477

Abstract: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

公开(公告)号：US20180114838A1

公开(公告)日：2018-04-26

申请号：US15782165

申请日：2017-10-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Hiromi SAWAI ,  Hajime KIMURA

IPC: H01L29/22 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10

CPC classification number: H01L29/78696 ,  H01L27/10 ,  H01L27/1225 ,  H01L29/2206 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78618

Abstract: A high-performance and highly reliable semiconductor device is provided. The semiconductor device includes: a first oxide; a source electrode; a drain electrode; a second oxide over the first oxide, the source electrode, and the drain electrode; a gate insulating film over the second oxide; and a gate electrode over the gate insulating film. The source electrode is electrically connected to the first oxide. The drain electrode is electrically connected to the first oxide. Each of the first oxide and the second oxide includes In, an element M (M is Al, Ga, Y, or Sn), and Zn. Each of the first oxide and the second oxide includes more In atoms than element M atoms. An atomic ratio of the In, the Zn, and the element M in the first oxide is equal to or similar to an atomic ratio of the In, the Zn, and the element M in the second oxide.

公开(公告)号：US20180076332A1

公开(公告)日：2018-03-15

申请号：US15814925

申请日：2017-11-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Satoru OKAMOTO ,  Motomu KURATA ,  Yuta ENDO

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/8258 ,  H01L22/12 ,  H01L27/0688 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648

Abstract: A semiconductor device which includes a transistor having a miniaturized structure is provided. A first insulator is provided over a stack in which a semiconductor, a first conductor, and a second conductor are stacked in this order. Over the first insulator, an etching mask is formed. Using the etching mask, the first insulator and the second conductor are etched until the first conductor is exposed. After etching the first conductor until the semiconductor is exposed so as to form a groove having a smaller width than the second conductor, a second insulator and a third conductor are formed sequentially.

公开(公告)号：US20170236849A1

公开(公告)日：2017-08-17

申请号：US15584064

申请日：2017-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO

IPC: H01L27/12 ,  G02F1/1368

Abstract: A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.

公开(公告)号：US20160351576A1

公开(公告)日：2016-12-01

申请号：US15159021

申请日：2016-05-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomoaki ATSUMI ,  Yuta ENDO

IPC: H01L27/115 ,  H01L29/24 ,  H01L29/10

CPC classification number: H01L27/1157 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  H01L27/11573 ,  H01L27/11582

Abstract: A highly integrated semiconductor device is provided. The semiconductor device includes a substrate, a prism-like insulator, a memory cell string including a plurality of transistors connected in series. The prism-like insulator is provided over the substrate. The memory cell string is provided on the side surface of the prism-like insulator. The plurality of transistors each include a gate insulator and a gate electrode. The gate insulator includes a first insulator, a second insulator, and a charge accumulation layer. The charge accumulation layer is positioned between the first insulator and the second insulator.

Abstract translation: 提供了高度集成的半导体器件。 半导体器件包括衬底，棱镜状绝缘体，包括串联连接的多个晶体管的存储单元串。 棱镜状绝缘体设置在基板上。 存储单元串设置在棱柱状绝缘体的侧面上。 多个晶体管各自包括栅极绝缘体和栅电极。 栅极绝缘体包括第一绝缘体，第二绝缘体和电荷累积层。 电荷累积层位于第一绝缘体和第二绝缘体之间。

公开(公告)号：US20150294990A1

公开(公告)日：2015-10-15

申请号：US14679104

申请日：2015-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomoaki ATSUMI ,  Yuta ENDO

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/7869

Abstract: A highly integrated semiconductor device is provided. A first region of a first semiconductor and a first region of a second semiconductor overlap each other. A first region of the first conductor and the first region of the first semiconductor overlap each other with a first insulator interposed therebetween. A first region of a second conductor and the first region of the second semiconductor overlap each other with a second insulator interposed therebetween. A first region of a third conductor is in contact with a second region of the first semiconductor. A second region of the third conductor is in contact with a second region of the second semiconductor. A first region of a fourth conductor is in contact with a second region of the first conductor. A second region of the fourth conductor is in contact with a second region of the second conductor.

Abstract translation: 提供了高度集成的半导体器件。 第一半导体的第一区域和第二半导体的第一区域彼此重叠。 第一导体的第一区域和第一半导体的第一区域彼此重叠，并且第一绝缘体插入其间。 第二导体的第一区域和第二半导体的第一区域彼此重叠，并且间隔开第二绝缘体。 第三导体的第一区域与第一半导体的第二区域接触。 第三导体的第二区域与第二半导体的第二区域接触。 第四导体的第一区域与第一导体的第二区域接触。 第四导体的第二区域与第二导体的第二区域接触。

公开(公告)号：US20150279668A1

公开(公告)日：2015-10-01

申请号：US14678119

申请日：2015-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02554 ,  H01L21/02488 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

Abstract translation: 使用含有硅氧化物自由基的绝缘层作为与用于形成沟道的氧化物半导体层接触的绝缘层。 氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造可靠性高，电特性变化小的半导体装置。