发明申请
US20150318169A1 METHODS OF FORMING EPITAXIAL SEMICONDUCTOR CLADDING MATERIAL ON FINS OF A FINFET SEMICONDUCTOR DEVICE
审中-公开
在FINFET半导体器件的FINS上形成外延半导体封装材料的方法
- 专利标题： METHODS OF FORMING EPITAXIAL SEMICONDUCTOR CLADDING MATERIAL ON FINS OF A FINFET SEMICONDUCTOR DEVICE
- 专利标题（中）： 在FINFET半导体器件的FINS上形成外延半导体封装材料的方法
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申请号： US14267634申请日： 2014-05-01
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公开(公告)号： US20150318169A1公开(公告)日： 2015-11-05
- 发明人: Yi Qi , Ajey Poovannummoottil Jacob , Jody A. Fronheiser , Murat Kerem Akarvardar , David Paul Brunco
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/161 ; H01L29/66
摘要：
One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate and performing an epitaxial deposition process using a combination of silane (SiH4), dichlorosilane (SiH2Cl2), germane (GeH4) and a carrier gas to form an epi semiconductor material around the fin, wherein the flow rate of dichlorosilane used during the epitaxial deposition process is equal to 10-90% of the combined flow rate of silane and dichlorosilane.
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