发明申请
US20150348798A1 CMP SLURRY COMPOSITION FOR POLISHING AN ORGANIC LAYER AND METHOD OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME
审中-公开
用于抛光有机层的CMP浆料组合物及其形成使用其的半导体器件的方法
- 专利标题： CMP SLURRY COMPOSITION FOR POLISHING AN ORGANIC LAYER AND METHOD OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME
- 专利标题（中）： 用于抛光有机层的CMP浆料组合物及其形成使用其的半导体器件的方法
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申请号： US14825846申请日： 2015-08-13
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公开(公告)号： US20150348798A1公开(公告)日： 2015-12-03
- 发明人: Yun-Jeong KIM , Sang-Kyun Kim , Kwang-Bok Kim , Ye-Hwan Kim , Jung-Sik Choi , Choong-Ho Han , Gi-Sik Hong
- 申请人： Yun-Jeong KIM , Sang-Kyun Kim , Kwang-Bok Kim , Ye-Hwan Kim , Jung-Sik Choi , Choong-Ho Han , Gi-Sik Hong
- 优先权： KR10-2013-0084279 20130717; KR10-2014-0005583 20140116; KR10-2014-0056408 20140512
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L27/115 ; H01L21/311
摘要：
A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.
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