Portable internet radio access station including multiple management processors and method of controlling the multiple management processors
    4.
    发明授权
    Portable internet radio access station including multiple management processors and method of controlling the multiple management processors 有权
    便携式互联网无线电接入站,包括多个管理处理器和多个管理处理器的控制方法

    公开(公告)号:US08036103B2

    公开(公告)日:2011-10-11

    申请号:US12300041

    申请日:2007-05-23

    IPC分类号: G01R31/08 H04L12/66 H04J3/12

    CPC分类号: H04W88/08 H04W24/00

    摘要: The present invention relates to a portable internet radio access station, and more particularly, to a portable internet radio access station including a plurality of management processors and a method of controlling the plurality of management processors. A first management processor of a portable internet radio access station according to the present invention includes: an obstruction sensing unit sensing an obstruction in the first and second management processors; a call processing database storing a call processing information of the portable internet radio access station; an operation state determining unit determining an operation state of the first management processor based on the obstruction; and a database synchronizing unit synchronizing the call processing database with a call processing database of the second management processor based on the operation state of the first management processor Accordingly, continuity and reliability in call processing are obtained in the portable internet radio access station of the present invention.

    摘要翻译: 便携式无线电接入站技术领域本发明涉及一种便携式无线电接入站,更具体地,涉及包括多个管理处理器的便携式因特网无线电接入站和控制多个管理处理器的方法。 根据本发明的便携式因特网无线电接入站的第一管理处理器包括:障碍物感测单元,感测第一和第二管理处理器中的障碍物; 呼叫处理数据库,存储便携式无线电接入站的呼叫处理信息; 操作状态确定单元,基于所述障碍物确定所述第一管理处理器的操作状态; 以及基于第一管理处理器的操作状态的呼叫处理数据库与第二管理处理器的呼叫处理数据库同步的数据库同步单元。因此,在本发明的便携式无线电接入站中获得呼叫处理中的连续性和可靠性 发明。

    Method of forming an ohmic layer and method of forming a metal wiring of a semiconductor device using the same
    6.
    发明申请
    Method of forming an ohmic layer and method of forming a metal wiring of a semiconductor device using the same 审中-公开
    形成欧姆层的方法和使用该欧姆层的半导体器件的金属布线的形成方法

    公开(公告)号:US20090233439A1

    公开(公告)日:2009-09-17

    申请号:US12382008

    申请日:2009-03-05

    IPC分类号: H01L21/768

    摘要: A metal organic precursor represented by a formula of R1-CpML is provided onto a substrate having a conductive pattern including silicon. Here, R1 is an alkyl group substituent of Cp, R1 including methyl, ethyl, propyl, pentamethyl, pentaethyl, diethyl, dimethyl or dipropyl, Cp is cyclopentadienyl, M includes nickel (Ni), cobalt (Co), titanium (Ti), platinum (Pt) zirconium (Zr) or ruthenium (Ru), and L is at least one ligand, the at least one ligand including a carbonyl. A deposition process is performed using the metal organic precursor to form a preliminary metal silicide layer and a metal layer on the substrate. The preliminary metal silicidation layer is formed on the conductive pattern. The preliminary metal silicide layer is transformed into a metal silicide layer.

    摘要翻译: 将由式R1-CpML表示的金属有机前体提供到具有包括硅的导电图案的基板上。 这里,R1是Cp的烷基取代基,R1包括甲基,乙基,丙基,五甲基,五乙基,二乙基,二甲基或二丙基,Cp是环戊二烯基,M包括镍(Ni),钴(Co),钛(Ti) 铂(Pt)锆(Zr)或钌(Ru),L是至少一种配体,所述至少一种配体包括羰基。 使用金属有机前体进行沉积工艺,以在衬底上形成初步金属硅化物层和金属层。 在导电图案上形成预备金属硅化层。 将初级金属硅化物层转变成金属硅化物层。