发明申请
- 专利标题： METHOD OF FORMING PATTERNS AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
- 专利标题（中）： 形成图案的方法和制造集成电路装置的方法
-
申请号： US14695047申请日： 2015-04-24
-
公开(公告)号： US20150364334A1公开(公告)日： 2015-12-17
- 发明人: Yool Kang , Dong-won Kim , Ju-young Kim , Tae-hoon Kim , Hye-ji Lee , Su-min Park , Hyung-rae Lee
- 申请人： Yool Kang , Dong-won Kim , Ju-young Kim , Tae-hoon Kim , Hye-ji Lee , Su-min Park , Hyung-rae Lee
- 优先权： KR10-2014-0072349 20140613
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/311 ; H01L21/02 ; H01L21/027
摘要：
Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.
公开/授权文献
信息查询
IPC分类:
