公开(公告)号：US20150364334A1

公开(公告)日：2015-12-17

申请号：US14695047

申请日：2015-04-24

申请人： Yool Kang ,  Dong-won Kim ,  Ju-young Kim ,  Tae-hoon Kim ,  Hye-ji Lee ,  Su-min Park ,  Hyung-rae Lee

发明人： Yool Kang ,  Dong-won Kim ,  Ju-young Kim ,  Tae-hoon Kim ,  Hye-ji Lee ,  Su-min Park ,  Hyung-rae Lee

IPC分类号： H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/027

CPC分类号： H01L21/3086 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

摘要： Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.

摘要翻译： 提供形成图案的方法和制造集成电路器件的方法。 在形成图案的方法中，形成具有暴露目标层的第一区域的第一开口的光致抗蚀剂图案。 在限定第一开口的光致抗蚀剂图案的侧壁处形成覆盖层。 通过将酸从封盖层扩散到光致抗蚀剂图案的内部，在第一开口周围形成不溶性区域。 通过去除与第一开口间隔开的可溶性区域形成暴露目标层的第二区域的第二开口，其中插入不溶性区域。 使用不溶性区域作为蚀刻掩模蚀刻靶层。