发明申请
US20150372203A1 Optoelectronic Semiconductor Chip Encapsulated with an ALD Layer and Corresponding Method for Production 有权
用ALD层封装的光电半导体芯片和相应的生产方法

Optoelectronic Semiconductor Chip Encapsulated with an ALD Layer and Corresponding Method for Production
摘要:
An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.
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