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    METHOD FOR PRODUCING A PLURALITY OF SEMICONDUCTOR CHIPS AND SEMICONDUCTOR CHIP
    3.
    发明申请
    METHOD FOR PRODUCING A PLURALITY OF SEMICONDUCTOR CHIPS AND SEMICONDUCTOR CHIP 审中-公开

    公开(公告)号：US20180012801A1

    公开(公告)日：2018-01-11

    申请号：US15544267

    申请日：2016-01-11

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Michael Huber ,  Lorenzo Zini

    IPC分类号： H01L21/78 ,  H01L23/31

    CPC分类号： H01L21/78 ,  H01L23/3171 ,  H01L33/0095 ,  H01L33/44

    摘要： According to the present disclosure, a method for producing a plurality of semiconductor chips is provided with the following steps: a) providing a composite assembly, including a carrier, a semiconductor layer sequence and a functional layer; b) severing the functional layer by means of coherent radiation along a singulation pattern; c) forming separating trenches in the carrier along the singulation pattern; and d) applying a protective layer, which delimits the functional layer toward the separating trenches, on in each case at least one side surface of the semiconductor chips to be singulated. The singulated semiconductor chips each includes a part of the semiconductor layer sequence, of the carrier and of the functional layer.

    OPTOELECTRONIC SEMICONDUCTOR DEVICE COMPRISING AN INSULATING LAYER AND METHOD OF MANUFACTURING THE OPTOELECTRONIC SEMICONDUCTOR DEVICE
    5.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR DEVICE COMPRISING AN INSULATING LAYER AND METHOD OF MANUFACTURING THE OPTOELECTRONIC SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220158034A1

    公开(公告)日：2022-05-19

    申请号：US17440190

    申请日：2020-03-16

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Ivar Tangring ,  Michael Huber

    IPC分类号： H01L33/38 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44

    摘要： An optoelectronic semiconductor device may include a first and a second semiconductor layer having a first and a second conductivity type. The optoelectronic semiconductor device may include a first contact layer in direct contact with the first semiconductor layer, a first insulating layer formed over the semiconductor layers, and a second current spreading structure electrically connected to the second semiconductor layer. A maximum lateral extension of the second semiconductor layer is greater than a maximum lateral extension of the first semiconductor layer, such that a step structure is formed, and the first insulating layer is formed as a conformal layer over the step structure. A second insulating layer may be arranged between a horizontal surface of the first contact layer and the second current spreading structure. The thickness of the second insulating layer is smaller than the smallest thickness of the first insulating layer over the step structure.