Invention Application
US20150380263A1 CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING ONE OR MORE POLYMERS SELECTED FROM THE GROUP CONSISTING OF N-VINYL-HOMOPOLYMERS AND N-VINYL COPOLYMERS 审中-公开
化学机械抛光组合物包含从包含N-乙烯基共聚物和N-乙烯基共聚物的组中选择的一种或多种聚合物

  • Patent Title: CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING ONE OR MORE POLYMERS SELECTED FROM THE GROUP CONSISTING OF N-VINYL-HOMOPOLYMERS AND N-VINYL COPOLYMERS
  • Patent Title (中): 化学机械抛光组合物包含从包含N-乙烯基共聚物和N-乙烯基共聚物的组中选择的一种或多种聚合物
  • Application No.: US14768825
    Application Date: 2014-05-05
  • Publication No.: US20150380263A1
    Publication Date: 2015-12-31
  • Inventor: Yongqing LANPeter PRZYBYLSKIZhenyu BAOJulian PROELSS
  • Applicant: BASF SE
  • Applicant Address: DE Ludwigshafen
  • Assignee: BASF SE
  • Current Assignee: BASF SE
  • Current Assignee Address: DE Ludwigshafen
  • Priority: EP13167872.4 20130515
  • International Application: PCT/IB2014/061200 WO 20140505
  • Main IPC: H01L21/306
  • IPC: H01L21/306 C09G1/02
CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING ONE OR MORE POLYMERS SELECTED FROM THE GROUP CONSISTING OF N-VINYL-HOMOPOLYMERS AND N-VINYL COPOLYMERS
Abstract:
Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的(在半导体材料上制作电极的入H01L21/28)
H01L21/302 .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割
H01L21/306 ......化学或电处理,例如电解腐蚀(形成绝缘层的入H01L21/31;绝缘层的后处理入H01L21/3105)
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