USE OF A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING A SUBSTRATE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL
    1.
    发明申请
    USE OF A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING A SUBSTRATE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL 有权
    使用化学机械抛光(CMP)组合物来抛光含有至少一种III-V材料的基底或层

    公开(公告)号:US20160096979A1

    公开(公告)日:2016-04-07

    申请号:US14890754

    申请日:2014-05-06

    Applicant: BASF SE

    Abstract: Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了化学机械抛光(CMP)组合物用于抛光含有一种或多种III-V材料的基底或层的用途,其中化学机械抛光(CMP)组合物包含以下组分:(A)表面改性二氧化硅 在2至6(B)的pH范围内具有-15mV或更低的负ζ电位的颗粒(B)选自以下的一种或多种组分:(i)不具有芳环退火的取代和未取代的三唑, 三唑环,(ii)苯并咪唑,(iii)选自具有两个或更多个羧基的氨基酸的螯合剂,脂族羧酸及其各自的盐,以及(iv)丙烯酸的均聚物和共聚物, 和其各自的盐,(C)水(D)任选的一种或多种其它组分,其中组合物的pH在2-6范围内。

    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID
    2.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID 审中-公开
    包含N,N,N',N'-四(2-羟基丙基) - 乙烯二胺或甲磺酸的化学机械抛光组合物

    公开(公告)号:US20160009955A1

    公开(公告)日:2016-01-14

    申请号:US14770185

    申请日:2014-05-06

    Applicant: BASF SE

    CPC classification number: C09G1/02 C09K3/1436 C09K3/1463 H01L21/30625

    Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了包含以下组分的化学机械抛光(CMP)组合物:(A)在2至6(B)N范围内的pH下具有-15mV或更低的ζ电位差的表面改性二氧化硅颗粒, N,N',N'-四 - (2-羟丙基) - 乙二胺或甲磺酸(C)水(D)任选的一种或多种其它组分,其中组合物的pH在2-6范围内。

    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING POLYETHYLENE IMINE
    3.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING POLYETHYLENE IMINE 有权
    包含聚乙烯内酯的化学机械抛光组合物

    公开(公告)号:US20160068712A1

    公开(公告)日:2016-03-10

    申请号:US14891175

    申请日:2014-05-05

    Applicant: BASF SE

    Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了一种化学机械抛光(CMP)组合物,其包含以下组分:(A)在pH为2至6(B)的范围内具有-15mV或更低的ζ电位的表面改性二氧化硅颗粒,或 更多的聚乙烯亚胺(C)水(D)任选地一种或多种另外的组分,其中组合物的pH在2至6的范围内。

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