公开(公告)号：US20200294813A1

公开(公告)日：2020-09-17

申请号：US16094381

申请日：2016-04-27

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: H01L21/321 ,  C09K3/14 ,  C09G1/02

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20170362464A1

公开(公告)日：2017-12-21

申请号：US15538851

申请日：2015-12-22

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  B24B37/20 ,  C09K3/14 ,  C23F3/06 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  B24B37/20 ,  C09K3/1409 ,  C23F3/06 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/461 ,  H01L21/463 ,  H01L21/7684

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20160096979A1

公开(公告)日：2016-04-07

申请号：US14890754

申请日：2014-05-06

Applicant: BASF SE

Inventor： Yongqing LAN ,  Peter PRZYBYLSKI ,  Zhenyu BAO ,  Julian PROELSS

IPC: C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625

Abstract: Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 描述了化学机械抛光（CMP）组合物用于抛光含有一种或多种III-V材料的基底或层的用途，其中化学机械抛光（CMP）组合物包含以下组分：（A）表面改性二氧化硅 在2至6（B）的pH范围内具有-15mV或更低的负ζ电位的颗粒（B）选自以下的一种或多种组分：（i）不具有芳环退火的取代和未取代的三唑， 三唑环，（ii）苯并咪唑，（iii）选自具有两个或更多个羧基的氨基酸的螯合剂，脂族羧酸及其各自的盐，以及（iv）丙烯酸的均聚物和共聚物， 和其各自的盐，（C）水（D）任选的一种或多种其它组分，其中组合物的pH在2-6范围内。

公开(公告)号：US20220056307A1

公开(公告)日：2022-02-24

申请号：US17312821

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael LAUTER ,  Te Yu WEI ,  Wei Lan CHIU ,  Reza M. GOLZARIAN ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US20210102093A1

公开(公告)日：2021-04-08

申请号：US17123685

申请日：2020-12-16

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: A chemical mechanical polishing composition may be used for chemical mechanical polishing of a substrate including (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition includes (A) inorganic particles (B) at least one organic compound including an amino-group and an acid group, the compound including n amino groups and at least n+1 acidic protons, a being a integer ≥1; (C) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the MP composition; and (D) an aqueous medium. The CMP composition may have a pH of more than 6 and less than 9.

公开(公告)号：US20170158913A1

公开(公告)日：2017-06-08

申请号：US15325464

申请日：2015-07-14

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN

IPC: C09G1/04

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：US20160009955A1

公开(公告)日：2016-01-14

申请号：US14770185

申请日：2014-05-06

Applicant: BASF SE

Inventor： Yongqing LAN ,  Peter PRZYBYLSKI ,  Zhenyu BAO ,  Julian PROELSS

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 描述了包含以下组分的化学机械抛光（CMP）组合物：（A）在2至6（B）N范围内的pH下具有-15mV或更低的ζ电位差的表面改性二氧化硅颗粒， N，N'，N'-四 - （2-羟丙基） - 乙二胺或甲磺酸（C）水（D）任选的一种或多种其它组分，其中组合物的pH在2-6范围内。

公开(公告)号：US20220064485A1

公开(公告)日：2022-03-03

申请号：US17312807

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael LEUTER ,  WEI Taoyuan ,  Wei Lan CHIU ,  Reza M. GOLZARIAN ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US20200299547A1

公开(公告)日：2020-09-24

申请号：US16765665

申请日：2018-11-12

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

公开(公告)号：US20190002802A1

公开(公告)日：2019-01-03

申请号：US16064686

申请日：2016-12-20

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Michael LAUTER ,  Piotr PRZYBYLSKI ,  Julian PROELSS ,  Andreas KLIPP ,  Haci Osman GUEVENC ,  Leonardus LEUNISSEN ,  Roelf-Peter BAUMANN ,  Te Yu WEI

IPC: C11D7/26 ,  C11D7/32 ,  C11D3/00 ,  H01L21/321 ,  H01L21/02

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.