发明申请
- 专利标题： Radiation Source-Collector and Method for Manufacture
- 专利标题（中）： 辐射源 - 收集器和制造方法
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申请号： US14765367申请日： 2014-01-14
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公开(公告)号： US20160012929A1公开(公告)日： 2016-01-14
- 发明人: Alexey Sergeevich KUZNETSOV , Arjen BOOGAARD , Jeroen Marcel HUIJBREGTSE , Andrey NIKIPELOV , Maarten VAN KAMPEN
- 申请人： ASML NETHERLANDS B.V.
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 国际申请： PCT/EP2014/050552 WO 20140114
- 主分类号： G21K1/06
- IPC分类号： G21K1/06 ; G03F7/20 ; C23C28/00 ; H05G2/00
摘要：
A method of manufacturing a multi-layer mirror comprising a multi-layer stack of pairs of alternating layers of a first material and silicon, the method comprising depositing a stack of pairs of alternating layers of the first material and layers of silicon, the stack being supported by a substrate and doping at least a first layer of the first material with a dopant material.
公开/授权文献
- US09773578B2 Radiation source-collector and method for manufacture 公开/授权日：2017-09-26
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