Invention Application
- Patent Title: MAGNETORESISTIVE EFFECT ELEMENT
- Patent Title (中): 磁感应效应元件
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Application No.: US14637254Application Date: 2015-03-03
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Publication No.: US20160013397A1Publication Date: 2016-01-14
- Inventor: Eiji KITAGAWA , Minoru AMANO , Megumi YAKABE , Hiroaki MAEKAWA
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Priority: JP2014-142661 20140710
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; H01L43/08

Abstract:
A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.
Public/Granted literature
- US09508926B2 Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium Public/Granted day:2016-11-29
Information query
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