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    METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE 审中-公开

    公开(公告)号：US20170263860A1

    公开(公告)日：2017-09-14

    申请号：US15231877

    申请日：2016-08-09

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Satoshi SETO ,  Minoru AMANO

    IPC: H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L43/12 ,  H01L27/228

    Abstract: According to one embodiment, a method of manufacturing a magnetoresistive memory device includes forming a mask on a stacked layer structure disposed on a substrate and constituting a plurality of magnetoresistive elements, etching the stacked layer structure selectively into a plurality of pillars corresponding to the mask by applying an ion beam at a first angle relative to a perpendicular direction to a surface of the substrate, removing deposited films attached to sidewalls of the pillars by applying an ion beam at a second angle greater than the first angle, and etching bottom portions of the pillars by applying an ion beam at a third angle less than the second angle.

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    3.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20150014756A1

    公开(公告)日：2015-01-15

    申请号：US14504140

    申请日：2014-10-01

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Tadaomi DAIBOU ,  Minoru AMANO ,  Daisuke SAIDA ,  Junichi ITO ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Hiroaki YODA

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

    CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

    Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

    MAGNETIC MEMORY DEVICE
    4.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20170263679A1

    公开(公告)日：2017-09-14

    申请号：US15268535

    申请日：2016-09-16

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Jyunichi OZEKI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Takao OCHIAI ,  Minoru AMANO ,  Kenji NOMA

    IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein saturation magnetization of part of the first magnetic layer which is located close to the first main surface is higher than saturation magnetization of part of the first magnetic layer which is located close to the second main surface.

    MAGNETIC MEMORY ELEMENT AND MEMORY DEVICE
    5.
    发明申请
    MAGNETIC MEMORY ELEMENT AND MEMORY DEVICE 有权
    磁记忆元件和存储器件

    公开(公告)号：US20160379698A1

    公开(公告)日：2016-12-29

    申请号：US15263952

    申请日：2016-09-13

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Daisuke SAIDA ,  Minoru AMANO ,  Jyunichi OZEKI ,  Naoharu SHIMOMURA

    IPC: G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

    CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/1936 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: According to one embodiment, a magnetic memory element includes a stacked structure. The stacked structure includes a first and a second stacked member. The first stacked member includes a first and second ferromagnetic layer. A magnetic resonance frequency of the second ferromagnetic layer is a first frequency. A direction of a magnetization of the second ferromagnetic layer is settable to a direction of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member. The direction of the magnetization of the second ferromagnetic layer does not change when the second current smaller than the first current flows in the first stacked member. The second stacked member includes a third ferromagnetic layer. A magnetization of the third ferromagnetic layer can generate a magnetic field of the first frequency by the second current.

    Abstract translation: 根据一个实施例，磁存储元件包括堆叠结构。 堆叠结构包括第一和第二堆叠构件。 第一堆叠构件包括第一和第二铁磁层。 第二铁磁层的磁共振频率是第一频率。 当第一频率的磁场施加到第一层叠构件并且第一电流在第一层叠构件中流动时，第二铁磁层的磁化方向可设定为第一电流的方向。 当小于第一电流的第二电流在第一堆叠构件中流动时，第二铁磁层的磁化方向不变。 第二堆叠构件包括第三铁磁层。 第三铁磁层的磁化可以通过第二电流产生第一频率的磁场。

    MAGNETIC MEMORY
    6.
    发明申请
    MAGNETIC MEMORY 有权
    磁记忆

    公开(公告)号：US20140269038A1

    公开(公告)日：2014-09-18

    申请号：US14198982

    申请日：2014-03-06

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Naoharu SHIMOMURA ,  Eiji KITAGAWA ,  Minoru AMANO ,  Daisuke SAIDA ,  Kay YAKUSHIJI ,  Takayuki NOZAKI ,  Shinji YUASA ,  Akio FUKUSHIMA ,  Hiroshi IMAMURA ,  Hitoshi KUBOTA

    IPC: G11C11/16 ,  H01L43/02

    CPC classification number: G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

    Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

    Abstract translation: 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。

    NONVOLATILE MEMORY DEVICE
    7.
    发明申请
    NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号：US20140085968A1

    公开(公告)日：2014-03-27

    申请号：US13795620

    申请日：2013-03-12

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Daisuke SAIDA ,  Minoru AMANO ,  Naoharu SHIMOMURA

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/161

    Abstract: According to one embodiment, a nonvolatile memory device includes: a magnetic memory element and a control unit. The magnetic memory element includes a stacked body, and a first and a second stacked units. The first stacked unit includes a first and second ferromagnetic layers and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer and a nonmagnetic tunneling barrier layer stacked with the third ferromagnetic layer. The control unit is configured to implement a first operation of setting the magnetic memory element to be in a first state. The first operation includes a first preliminary operation of applying a first pulse voltage; and a first setting operation of applying a second pulse voltage having a second rising time to the magnetic memory element after the first preliminary operation.

    Abstract translation: 根据一个实施例，非易失性存储器件包括：磁存储元件和控制单元。 磁存储元件包括层叠体，以及第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二堆叠单元包括与第三铁磁层堆叠的第三铁磁层和非磁性隧道势垒层。 控制单元被配置为实现将磁存储元件设置为处于第一状态的第一操作。 第一操作包括施加第一脉冲电压的第一初步操作; 以及在第一初步操作之后将具有第二上升时间的第二脉冲电压施加到磁存储元件的第一设置操作。

    MAGNETIC MEMORY DEVICE
    10.
    发明申请
    MAGNETIC MEMORY DEVICE 有权
    磁记忆装置

    公开(公告)号：US20160267960A1

    公开(公告)日：2016-09-15

    申请号：US14848258

    申请日：2015-09-08

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Akiyuki MURAYAMA ,  Eiji KITAGAWA ,  Masahiko NAKAYAMA ,  Minoru AMANO ,  Takao OCHIAI

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1695 ,  G11C2213/15

    Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a magnetoresistive effect element having first and second terminals, the first terminal being electrically connected to the first interconnect, a diode having first and second terminals, the first terminal being electrically connected to the first terminal of the magnetoresistive effect element, the second terminal being electrically connected to the second terminal of the magnetoresistive effect element, and a transistor having source and drain terminals, one of the source and drain terminals being electrically connected to the second terminal of the magnetoresistive effect element and the second terminal of the diode, the other of the source and drain terminals being electrically connected to the second interconnect.

    Abstract translation: 根据一个实施例，磁存储器件包括第一互连，第二互连，具有第一和第二端子的磁阻效应元件，第一端子电连接到第一互连件，具有第一和第二端子的二极管，第一端子 与磁阻效应元件的第一端子电连接，第二端子电连接到磁阻效应元件的第二端子，以及具有源极和漏极端子的晶体管，源极和漏极端子中的一个电连接到 磁阻效应元件的第二端子和二极管的第二端子，源极和漏极端子中的另一个电连接到第二互连件。

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