公开(公告)号：US20160197268A1

公开(公告)日：2016-07-07

申请号：US15068062

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Megumi YAKABE ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Junichi ITO ,  Eiji KITAGAWA

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including a first magnetic element; second magnetic layer; an intermediate layer between the first magnetic layer and the second magnetic layer; and a sidewall layer having a laminated structure on a side face of the first magnetic layer. The sidewall layer includes a first layer disposed on the side face of the first magnetic layer and including a first element having an atomic number larger than an atomic number of the first magnetic element, and a second layer including a second element having an atomic number smaller than the atomic number of the first atomic element. The first layer is disposed between the first magnetic layer and the second layer.

Abstract translation: 根据一个实施例，磁阻效应元件包括包括第一磁性元件的第一磁性层; 第二磁性层; 第一磁性层和第二磁性层之间的中间层; 以及在第一磁性层的侧面上具有层叠结构的侧壁层。 侧壁层包括设置在第一磁性层的侧面上的第一层，并且包括具有比第一磁性元件的原子序数大的原子序数的第一元素，以及包含原子序数较小的第二元素的第二层 比第一个原子元素的原子序数。 第一层设置在第一磁性层和第二层之间。

公开(公告)号：US20160196951A1

公开(公告)日：2016-07-07

申请号：US15067832

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yuichi OHSAWA ,  Akio UI ,  Junichi ITO ,  Chikayoshi KAMATA ,  Megumi YAKABE ,  Saori KASHIWADA

IPC: H01J37/08 ,  H01J37/30 ,  H01J37/09 ,  H01J37/20

CPC classification number: H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3053 ,  H01J2237/0822 ,  H01J2237/083 ,  H01J2237/3151 ,  H01L27/228 ,  H01L43/12

Abstract: According to one embodiment, a device manufacturing apparatus includes a substrate holding portion holding a substrate; an ion source including a housing, an anode disposed in the housing, a cathode disposed outside the housing, and a first opening disposed in a portion of the housing such that the anode is exposed to a region between the anode and the substrate holding portion, the ion source configured to generate an ion beam with which the substrate is irradiated; and at least one first structure disposed between the ion source and the substrate holding portion, and having a first through hole through which the ion beam passes. The first structure includes a conductor, and an opening dimension of the first through hole is equal to or larger than an opening dimension of the first opening.

Abstract translation: 根据一个实施例，一种装置制造装置包括：保持基板的基板保持部; 离子源，包括壳体，设置在壳体中的阳极，设置在壳体外部的阴极和设置在壳体的一部分中的第一开口，使得阳极暴露于阳极和衬底保持部分之间的区域， 所述离子源被配置为产生照射所述衬底的离子束; 以及设置在所述离子源和所述基板保持部之间的至少一个第一结构，并且具有离子束通过的第一通孔。 第一结构包括导体，第一通孔的开口尺寸等于或大于第一开口的开口尺寸。

公开(公告)号：US20160013397A1

公开(公告)日：2016-01-14

申请号：US14637254

申请日：2015-03-03

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Eiji KITAGAWA ,  Minoru AMANO ,  Megumi YAKABE ,  Hiroaki MAEKAWA

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.

Abstract translation: 磁阻效应元件包括具有磁各向异性和可变磁化方向的记录层，具有磁各向异性和不变磁化方向的参考层，记录层和参考层之间的中间层，含有钪（Sc）的底层， 在记录层的与设置有记录层的表面侧相反的表面侧，以及包含Sc的氧化物并设置在记录层和中间层的侧表面上的侧壁层。

公开(公告)号：US20140131649A1

公开(公告)日：2014-05-15

申请号：US14023772

申请日：2013-09-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi DAIBOU ,  Eiji KITAGAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Yushi KATO ,  Megumi YAKABE

IPC: H01L43/02

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.

Abstract translation: 根据一个实施例，磁阻元件包括具有第一表面和第二表面的第一磁性层，第二磁性层，设置在第一表面和第二磁性层之间的中间层，设置在第二表面上的含有B和 选自Hf，Al，Mg和Ti并具有第三和第四表面的至少一种元素，设置在第四表面上并含有B和选自Hf，Al和Mg中的至少一种元素的第二层，以及绝缘层 设置在中间层的侧壁上，并且包含选自第二层中所含的Hf，Al和Mg中的至少一种元素。