发明申请
- 专利标题： NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS
- 专利标题（中）： 使用双向电阻元件的非易失性存储器
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申请号： US14448174申请日： 2014-07-31
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公开(公告)号： US20160035415A1公开(公告)日： 2016-02-04
- 发明人: PERRY H. PELLEY , Frank K. Baker, JR.
- 申请人： PERRY H. PELLEY , Frank K. Baker, JR.
- 申请人地址： US TX AUSTIN
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX AUSTIN
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; G11C5/06
摘要：
A memory cell includes a single bi-directional resistive memory element (BRME) having a first terminal directly connected to a first power rail and a second terminal coupled to an internal node; and a first transistor having a control electrode coupled to the internal node, and a first current electrode coupled to a first bitline, and a second current electrode coupled to one of a group consisting of: a read wordline and the first power rail.
公开/授权文献
- US09779807B2 Non-volatile memory using bi-directional resistive elements 公开/授权日：2017-10-03