Invention Application
US20160056263A1 METHODS OF FORMING A GATE CAP LAYER ABOVE A REPLACEMENT GATE STRUCTURE
审中-公开
在替代门结构上形成门盖层的方法
- Patent Title: METHODS OF FORMING A GATE CAP LAYER ABOVE A REPLACEMENT GATE STRUCTURE
- Patent Title (中): 在替代门结构上形成门盖层的方法
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Application No.: US14928681Application Date: 2015-10-30
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Publication No.: US20160056263A1Publication Date: 2016-02-25
- Inventor: Gunter Grasshoff , Catherine Labelle
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/321 ; H01L21/311 ; H01L21/3105
Abstract:
A method includes performing a first chemical mechanical polishing process to define a polished replacement gate structure having a dished upper surface, wherein the polished dished upper surface of the polished replacement gate structure has a substantially curved concave configuration. A gate cap layer is formed above the polished replacement gate structure, wherein a bottom surface of the gate cap layer corresponds to the polished dished upper surface of the polished replacement gate structure.
Public/Granted literature
- US10199479B2 Methods of forming a gate cap layer above a replacement gate structure Public/Granted day:2019-02-05
Information query
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