发明申请
US20160071803A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
半导体器件及其制造方法

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要:
According to one embodiment, a semiconductor device is disclosed. The device includes a first interconnect, and an insulating film provided on the first interconnect, and being with a through hole communicating with the first interconnect. A catalyst layer is provided on the first interconnect of a bottom portion of the through hole. The catalyst layer has a form of a continuous film, and includes catalyst material and impurity. A first plug is provided in the through hole and is in contact with the catalyst layer, and includes a carbon nanotube layer. A second interconnect is disposed above the first interconnect and connected to the first interconnect via the first plug.
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