发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US14645268申请日: 2015-03-11
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公开(公告)号: US20160071803A1公开(公告)日: 2016-03-10
- 发明人: Tatsuro SAITO , Masayuki KITAMURA , Yuichi YAMAZAKI , Akihiro KAJITA , Atsuko SAKATA , Tadashi SAKAI
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2014-183167 20140909
- 主分类号: H01L23/532
- IPC分类号: H01L23/532 ; H01L21/768 ; H01L23/522
摘要:
According to one embodiment, a semiconductor device is disclosed. The device includes a first interconnect, and an insulating film provided on the first interconnect, and being with a through hole communicating with the first interconnect. A catalyst layer is provided on the first interconnect of a bottom portion of the through hole. The catalyst layer has a form of a continuous film, and includes catalyst material and impurity. A first plug is provided in the through hole and is in contact with the catalyst layer, and includes a carbon nanotube layer. A second interconnect is disposed above the first interconnect and connected to the first interconnect via the first plug.
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