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公开(公告)号：US20170069576A1
公开(公告)日：2017-03-09
申请号：US15067140
申请日：2016-03-10
IPC分类号： H01L23/532 , H01L23/522 , H01L21/768 , H01L23/528
CPC分类号： H01L23/53276 , H01L21/76834 , H01L21/76871 , H01L21/76885 , H01L21/76892 , H01L23/5226 , H01L23/5283
摘要： According to one embodiment, a semiconductor device includes an underlayer formed on a substrate, a catalyst layer disposed on the underlayer and extending in an interconnect length direction. The device further includes an upper graphene layer formed on an upper face of the catalyst layer, and side graphene layers provided on two respective side faces of the catalyst layer, the two side faces extending in the interconnect length direction.
摘要翻译： 根据一个实施例，半导体器件包括形成在衬底上的衬底，设置在衬底上并在互连长度方向上延伸的催化剂层。 该装置还包括形成在催化剂层的上表面上的上部石墨烯层和设置在催化剂层的两个相应侧面上的侧面石墨烯层，两个侧面沿互连长度方向延伸。
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公开(公告)号：US20170062346A1
公开(公告)日：2017-03-02
申请号：US15068506
申请日：2016-03-11
IPC分类号： H01L23/532 , H01L21/768 , H01L23/522
CPC分类号： H01L23/53276 , H01L21/76834 , H01L21/76885 , H01L21/76886 , H01L23/5226
摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a graphene layer containing impurities, and including a first region and a second region. The second region has a resistance higher than a resistance of the first region. The second region includes a side surface of an end of the graphene layer. The device further includes a first plug being in contact with the first region.
摘要翻译： 根据一个实施例，公开了一种半导体器件。 该装置包括含有杂质的石墨烯层，并且包括第一区域和第二区域。 第二区域具有高于第一区域的电阻的电阻。 第二区域包括石墨烯层的端部的侧表面。 该装置还包括与第一区域接触的第一插头。
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公开(公告)号：US20160276219A1
公开(公告)日：2016-09-22
申请号：US14841333
申请日：2015-08-31
发明人： Makoto WADA , Yuichi YAMAZAKI , Hisao MIYAZAKI , Akihiro KAJITA , Tatsuro SAITO , Atsunobu ISOBAYASHI , Taishi ISHIKURA , Masayuki KATAGIRI , Tadashi SAKAI
IPC分类号： H01L21/768 , H01L23/532 , H01L23/528
CPC分类号： H01L23/53276 , H01L21/76832 , H01L21/76834 , H01L21/76885
摘要： According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a graphene film on a catalytic layer, removing a part of the graphene film to form an exposed side surface of the graphene film, introducing dopant into the graphene film from the exposed side surface, and forming a graphene interconnect by patterning the graphene film into which the dopant is introduced.
摘要翻译： 根据一个实施方案，一种制造半导体器件的方法，该方法包括在催化剂层上形成石墨烯膜，除去一部分石墨烯膜以形成石墨烯膜的暴露侧表面，将掺杂剂引入到石墨烯膜中 暴露的侧表面，并且通过图案化引入掺杂剂的石墨烯膜来形成石墨烯互连。
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公开(公告)号：US20150259210A1
公开(公告)日：2015-09-17
申请号：US14628607
申请日：2015-02-23
发明人： Yuichi YAMAZAKI , Takashi YOSHIDA , Yasutaka NISHIDA , Hisao MIYAZAKI , Fumihiko AlGA , Tadashi SAKAI
CPC分类号： H01B1/04 , B82Y30/00 , C01B32/182 , H01L23/53276 , H01L2924/0002 , Y10S977/734 , Y10S977/932 , Y10T428/2982 , H01L2924/00
摘要： A wiring includes a graphene having a five-seven-membered ring-dense region. The graphene has a plurality of unit cells each including a five-seven-membered ring. The length of the unit cell is 1 nm or more. The shortest distance between most closely adjacent unit cells among the unit cells is 5 nm or less in the five-seven-membered ring-dense region.
摘要翻译： 布线包括具有五七元环稠密区域的石墨烯。 石墨烯具有多个单元电池，每个单元电池均包含五元七元环。 单元电池的长度为1nm以上。 单元电池中最接近相邻单位电池的最短距离在五七元环稠密区域中为5nm以下。
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公开(公告)号：US20150061133A1
公开(公告)日：2015-03-05
申请号：US14176993
申请日：2014-02-10
IPC分类号： H01L23/498
CPC分类号： H01L23/49877 , H01L21/00 , H01L21/76885 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device using a graphene film comprises a catalytic metal layer formed on a groundwork substrate includes a contact via, and a multilayered graphene layer formed in a direction parallel with a surface of the substrate. The catalytic metal layer is formed to be connected to the contact via and covered with an insulation film except one side surface. The multilayered graphene layer is grown from the side surface of the catalytic metal layer which is not covered with the insulation film.
摘要翻译： 根据一个实施例，使用石墨烯薄膜的半导体器件包括形成在基底基板上的催化金属层，其包括接触通孔，以及在与基板的表面平行的方向上形成的多层石墨烯层。 催化金属层形成为连接到接触通孔，并被除了一个侧表面之外的绝缘膜覆盖。 多层石墨烯层从没有被绝缘膜覆盖的催化金属层的侧表面生长。
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公开(公告)号：US20150061131A1
公开(公告)日：2015-03-05
申请号：US14202683
申请日：2014-03-10
发明人： Tatsuro SAITO , Makoto WADA , Atsunobu ISOBAYASHI , Akihiro KAJITA , Hisao MIYAZAKI , Tadashi SAKAI
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76877 , H01L21/28556 , H01L23/5226 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/754 , Y10S977/932 , H01L2924/00
摘要： According to one embodiment, a semiconductor device in which CNTs are used for a contact via comprises a substrate includes a contact via groove, a catalyst layer for CNT growth which is formed at the bottom of the groove, and a CNT via formed by filling the CNTs into the groove in which the catalyst layer is formed. Each of the CNTs is formed by stacking a plurality of graphene layers in a state in which they are inclined depthwise with respect to the groove, and formed such that ends of the graphene layers are exposed on a sidewall of the CNT. Further, the CNT is doped with at least one element from the sidewall of the CNT.
摘要翻译： 根据一个实施例，其中CNT用于接触通孔的半导体器件包括衬底，其包括接触通孔槽，形成在沟槽底部的用于CNT生长的催化剂层和通过填充 CNT进入形成催化剂层的槽中。 每个CNT通过在它们相对于凹槽深度方向倾斜的状态下堆叠多个石墨烯层而形成，并且形成为使得石墨烯层的端部暴露在CNT的侧壁上。 此外，CNT从CNT的侧壁掺杂有至少一种元素。
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公开(公告)号：US20180012846A1
公开(公告)日：2018-01-11
申请号：US15446244
申请日：2017-03-01
IPC分类号： H01L23/532
CPC分类号： H01L23/53276 , H01L23/53295
摘要： A graphene structure of an embodiment includes multilayer graphene laminated with graphene sheets, and a first interlayer material being present between the graphene sheets of the multilayer graphene and containing a multimer of molybdenum oxide.
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公开(公告)号：US20160268210A1
公开(公告)日：2016-09-15
申请号：US14842545
申请日：2015-09-01
发明人： Tatsuro SAITO , Masayuki KITAMURA , Atsuko SAKATA , Makoto WADA , Akihiro KAJITA , Tadashi SAKAI
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53276 , H01L21/76861 , H01L21/76876 , H01L21/76885
摘要： According to one embodiment, a semiconductor device is disclosed. The device includes interconnects each including a catalyst layer and a graphene layer thereon. The catalyst layer includes a first to fifth catalyst regions arranged along a first direction in order of the first to fifth catalyst regions. The first, third and fifth catalyst regions include upper surfaces higher than those of the second and fourth catalyst regions. Adjacent ones of the first to fifth catalyst regions are in contact with each other. A distance between the first and the third catalyst region and a distance between the third and fifth catalyst region are greater than a mean free path of graphene. The graphene layer includes a first graphene layer on the second catalyst region and a second graphene layer on the fourth catalyst region.
摘要翻译： 根据一个实施例，公开了一种半导体器件。 该装置包括各自包括催化剂层和其上的石墨烯层的互连。 催化剂层包括按照第一至第五催化剂区域的顺序沿第一方向布置的第一至第五催化剂区域。 第一，第三和第五催化剂区域包括高于第二和第四催化剂区域的上表面。 相邻的第一至第五催化剂区域彼此接触。 第一和第三催化剂区域之间的距离以及第三和第五催化剂区域之间的距离大于石墨烯的平均自由程。 石墨烯层包括第二催化剂区上的第一石墨烯层和第四催化剂区上的第二石墨烯层。
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公开(公告)号：US20160086891A1
公开(公告)日：2016-03-24
申请号：US14842249
申请日：2015-09-01
IPC分类号： H01L23/532 , H01L21/3205 , H01L23/528
CPC分类号： H01L23/53276 , H01L21/76834 , H01L21/76838 , H01L2924/0002 , H01L2924/00
摘要： Graphene wiring of an embodiment has a graphene intercalation compound including a multilayer graphene having graphene sheets stacked therein and an interlayer substance disposed between layers of the multilayer graphene, and an interlayer cross-linked layer connected to a side surface of the multilayer graphene. The interlayer cross-linked layer has a cross-linked molecular structure including multiple bonded molecules cross-linking the graphene sheets included in the multilayer graphene.
摘要翻译： 实施例的石墨烯布线具有石墨烯插层化合物，其包括层叠有石墨烯片的多层石墨烯和设置在多层石墨烯的层之间的层间物质，以及连接到多层石墨烯的侧表面的层间交联层。 层间交联层具有包含交联多层石墨烯中所含的石墨烯片的多个键合分子的交联分子结构。
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公开(公告)号：US20150255399A1
公开(公告)日：2015-09-10
申请号：US14717331
申请日：2015-05-20
发明人： Yuichi YAMAZAKI , Makoto WADA , Masayuki KITAMURA , Tadashi SAKAI
IPC分类号： H01L23/532
CPC分类号： H01L23/53276 , B82Y10/00 , B82Y30/00 , B82Y99/00 , H01L2924/0002 , H05K1/097 , Y10S977/734 , Y10S977/762 , H01L2924/00
摘要： A wire of an embodiment includes: a substrate; a metal film provided on the substrate; a metal part provided on the metal film; and graphene wires formed on the metal part, wherein the graphene wire is electrically connected to the metal film, and the metal film and the metal part are formed using different metals or alloys from each other.
摘要翻译： 实施例的线包括：基板; 设置在基板上的金属膜; 设置在金属膜上的金属部件; 以及形成在所述金属部分上的石墨烯线，其中所述石墨烯线与所述金属膜电连接，并且所述金属膜和所述金属部分使用彼此不同的金属或合金形成。
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