Invention Application
- Patent Title: EMBEDDED TUNGSTEN RESISTOR
-
Application No.: US14864504Application Date: 2015-09-24
-
Publication No.: US20160071838A1Publication Date: 2016-03-10
- Inventor: Russell Carlton McMullan , Binu Kamblath Pushkarakshan , Subramanian J. Narayan , Swaminathan Sankaran , Keith Edmund Kunz
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L49/02 ; H01L29/66

Abstract:
A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.
Public/Granted literature
- US09985018B2 Embedded tungsten resistor Public/Granted day:2018-05-29
Information query
IPC分类: