公开(公告)号：US10461075B2

公开(公告)日：2019-10-29

申请号：US14864538

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L23/522 ,  H01L27/06 ,  H01L49/02 ,  H01L27/08 ,  H01L29/66 ,  H01L29/872

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

公开(公告)号：US20160071839A1

公开(公告)日：2016-03-10

申请号：US14864538

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/872

CPC classification number: H01L27/0676 ,  H01L27/0629 ,  H01L27/0802 ,  H01L28/24 ,  H01L29/66143 ,  H01L29/8725

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

公开(公告)号：US09985018B2

公开(公告)日：2018-05-29

申请号：US14864504

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L49/02 ,  H01L27/06 ,  H01L27/08 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L27/0676 ,  H01L27/0629 ,  H01L27/0802 ,  H01L28/24 ,  H01L29/66143 ,  H01L29/8725

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

公开(公告)号：US20160071838A1

公开(公告)日：2016-03-10

申请号：US14864504

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/66

CPC classification number: H01L27/0676 ,  H01L27/0629 ,  H01L27/0802 ,  H01L28/24 ,  H01L29/66143 ,  H01L29/8725

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.