公开(公告)号：US10461075B2

公开(公告)日：2019-10-29

申请号：US14864538

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L23/522 ,  H01L27/06 ,  H01L49/02 ,  H01L27/08 ,  H01L29/66 ,  H01L29/872

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

公开(公告)号：US20160071839A1

公开(公告)日：2016-03-10

申请号：US14864538

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/872

CPC classification number: H01L27/0676 ,  H01L27/0629 ,  H01L27/0802 ,  H01L28/24 ,  H01L29/66143 ,  H01L29/8725

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

公开(公告)号：US20180287603A1

公开(公告)日：2018-10-04

申请号：US15996994

申请日：2018-06-04

Applicant: Texas Instruments Incorporated

Inventor： Anand Subramanian ,  Subramanian J. Narayan

IPC: H03K17/22 ,  H03K5/19 ,  H03K5/24

CPC classification number: H03K17/223 ,  H03K5/19 ,  H03K5/2472

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

公开(公告)号：US09991886B2

公开(公告)日：2018-06-05

申请号：US15495423

申请日：2017-04-24

Applicant: Texas Instruments Incorporated

Inventor： Anand Subramanian ,  Subramanian J. Narayan

IPC: H03K5/22 ,  H03K5/153 ,  H03K17/22 ,  H03K5/19

CPC classification number: H03K17/223 ,  H03K5/19 ,  H03K5/2472

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

公开(公告)号：US09634653B2

公开(公告)日：2017-04-25

申请号：US14587300

申请日：2014-12-31

Applicant: Texas Instruments Incorporated

Inventor： Anand Subramanian ,  Subramanian J. Narayan

IPC: H03K5/22 ,  H03K5/153 ,  H03K5/24 ,  H03K17/22

CPC classification number: H03K17/223 ,  H03K5/19 ,  H03K5/2472

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

公开(公告)号：US20160173077A1

公开(公告)日：2016-06-16

申请号：US14587300

申请日：2014-12-31

Applicant: Texas Instruments Incorporated

Inventor： Anand Subramanian ,  Subramanian J. Narayan

IPC: H03K5/24 ,  H03K17/22

CPC classification number: H03K17/223 ,  H03K5/19 ,  H03K5/2472

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

Abstract translation: 本公开提供了一种包括预充电电路的检测器。 预充电电路接收电源电压。 预充电比较器耦合到预充电电路并接收电源电压。 预充电比较器在转换节点处产生转换信号。 转换信号的斜率大于电源电压的斜率。 第一个二极管连接晶体管接收电源电压。 第一电容器耦合到第一二极管连接晶体管。 反相器耦合到第一二极管连接的晶体管，并且当电源电压低于阈值电压时产生使能信号。

公开(公告)号：US10250253B2

公开(公告)日：2019-04-02

申请号：US15996994

申请日：2018-06-04

Applicant: Texas Instruments Incorporated

Inventor： Anand Subramanian ,  Subramanian J. Narayan

IPC: H03K5/19 ,  H03K5/24 ,  H03K17/22

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

公开(公告)号：US09985018B2

公开(公告)日：2018-05-29

申请号：US14864504

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L49/02 ,  H01L27/06 ,  H01L27/08 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L27/0676 ,  H01L27/0629 ,  H01L27/0802 ,  H01L28/24 ,  H01L29/66143 ,  H01L29/8725

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

公开(公告)号：US20170230045A1

公开(公告)日：2017-08-10

申请号：US15495423

申请日：2017-04-24

Applicant: Texas Instruments Incorporated

Inventor： Anand Subramanian ,  Subramanian J. Narayan

IPC: H03K17/22 ,  H03K5/19

CPC classification number: H03K17/223 ,  H03K5/19 ,  H03K5/2472

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

公开(公告)号：US20160071838A1

公开(公告)日：2016-03-10

申请号：US14864504

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/66

CPC classification number: H01L27/0676 ,  H01L27/0629 ,  H01L27/0802 ,  H01L28/24 ,  H01L29/66143 ,  H01L29/8725

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.