Invention Application
US20160079738A1 TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
审中-公开
（Ga，Al，In，B）N薄膜，异质结构和器件的生长和制备技术
- Patent Title: TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
- Patent Title (中): （Ga，Al，In，B）N薄膜，异质结构和器件的生长和制备技术
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Application No.: US14953858Application Date: 2015-11-30
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Publication No.: US20160079738A1Publication Date: 2016-03-17
- Inventor: Robert M. Farrell , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland JP Kawaguchi City
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,Japan Science and Technology Agency
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Kawaguchi City
- Main IPC: H01S5/22
- IPC: H01S5/22 ; H01S5/323 ; H01S5/32
Abstract:
A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
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