公开(公告)号：US11735419B2

公开(公告)日：2023-08-22

申请号：US16752428

申请日：2020-01-24

Applicant: The Regents of the University of California

Inventor： Christian J. Zollner ,  Michael Iza ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/201

CPC classification number: H01L21/02664 ,  H01L21/0254 ,  H01L21/02617 ,  H01L29/201 ,  H01L29/2003

Abstract: A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

公开(公告)号：US11348908B2

公开(公告)日：2022-05-31

申请号：US16325709

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L25/16 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62

Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

公开(公告)号：US20220029049A1

公开(公告)日：2022-01-27

申请号：US17496124

申请日：2021-10-07

Applicant: The Regents of the University of California ,  King Abdulaziz City For Science And Technology (KACST)

Inventor： Abdullah Ibrahim Alhassan ,  Ahmed Alyamani ,  Abdulrahman Albadri ,  James S. Speck ,  Steven P. DenBaars

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  C23C16/34

Abstract: A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

公开(公告)号：US11158760B2

公开(公告)日：2021-10-26

申请号：US16270177

申请日：2019-02-07

Applicant: The Regents of the University of California

Inventor： Abdullah Ibrahim Alhassan ,  James S. Speck ,  Steven P. DenBaars ,  Ahmed Alyamani ,  Abdulrahman Albadri

IPC: H01L21/8238 ,  H01L29/66 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  C23C16/34

Abstract: A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

公开(公告)号：US20200335663A1

公开(公告)日：2020-10-22

申请号：US16075949

申请日：2017-02-06

Applicant: The Regents of the University of California

Inventor： Asad J. Mughal ,  Stacy J. Kowsz ,  Robert M. Farrell ,  Benjamin P. Yonkee ,  Erin C. Young ,  Christopher D. Pynn ,  Tal Margalith ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/32 ,  H01L25/075 ,  H01L33/06 ,  H01L33/00 ,  H01S5/04 ,  H01S5/30 ,  H01S5/343 ,  H01S5/40

Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.

公开(公告)号：US10529892B2

公开(公告)日：2020-01-07

申请号：US15698181

申请日：2017-09-07

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/16 ,  H01L33/00 ,  B82Y20/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01S5/32 ,  H01S5/343 ,  H01L33/02 ,  H01S5/042 ,  H01S5/22

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

公开(公告)号：US20190245112A1

公开(公告)日：2019-08-08

申请号：US16270177

申请日：2019-02-07

Applicant: The Regents of the University of California

Inventor： Abdullah Ibrahim Alhassan ,  James S. Speck ,  Steven P. DenBaars

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/0075 ,  C23C16/18 ,  H01L33/06 ,  H01L33/325

Abstract: A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

公开(公告)号：US20190165213A1

公开(公告)日：2019-05-30

申请号：US16320924

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/32 ,  H01L33/04 ,  H01L33/42 ,  H01L33/00 ,  H01S5/343

Abstract: A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 μm. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.

公开(公告)号：US09611987B2

公开(公告)日：2017-04-04

申请号：US14066012

申请日：2013-10-29

Applicant: The Regents of the University of California

Inventor： Kathryn M. Kelchner ,  James S. Speck ,  Nathan A. Pfaff ,  Steven P. DenBaars

IPC: H01L29/20 ,  H01L21/205 ,  F21K99/00 ,  F21K9/90 ,  F21K9/64

CPC classification number: F21K9/64 ,  F21K9/90

Abstract: A white light source employing a III-nitride based laser diode pumping one or more phosphors. The III-nitride laser diode emits light in a first wavelength range that is down-converted to light in a second wavelength range by the phosphors, wherein the light in the first wavelength range is combined with the light in the second wavelength range to create highly directional white light. The light in the first wavelength range comprises ultraviolet, violet, blue and/or green light, while the light in the second wavelength range comprises green, yellow and/or red light.

公开(公告)号：US20160194781A1

公开(公告)日：2016-07-07

申请号：US14909926

申请日：2014-08-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Siddha Pimputkar ,  Shuji Nakamura ,  James S. Speck

IPC: C30B7/10 ,  C30B29/40 ,  C30B9/12

CPC classification number: C30B7/105 ,  C30B9/12 ,  C30B29/403 ,  C30B35/002

Abstract: A method and apparatus for growing a Group-III nitride crystal using multiple interconnected reactor vessels to modify growth conditions during the ammonothermal growth of the Group-III nitride crystal, such that, by combining two or more vessels, it is possible to modify the conditions under which the Group-III nitride crystals are grown. In addition, the reactor vessel may use carbon fiber containing materials encapsulating oxide ceramic materials as structural elements to contain the materials for growing the Group-III nitride crystals at pressures or temperatures necessary for growth of the Group-III nitride crystals.

Abstract translation: 一种使用多个互连的反应器容器生长III族氮化物晶体以在III族氮化物晶体的氨热生长期间改变生长条件的方法和装置，使得通过组合两个或更多个容器，可以修改条件 其中III族氮化物晶体生长。 此外，反应器容器可以使用包含氧化物陶瓷材料的碳纤维的材料作为结构元件，以容纳用于在III族氮化物晶体生长所需的压力或温度下生长III族氮化物晶体的材料。