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公开(公告)号：US11552452B2
公开(公告)日：2023-01-10
申请号：US15880999
申请日：2018-01-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/00 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/32 , H01L31/0304 , H01L31/036 , H01L31/0735 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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公开(公告)号：US20150372456A1
公开(公告)日：2015-12-24
申请号：US14766924
申请日：2014-02-13
Applicant: Arash POURHASHEMI , Robert M. FARRELL , Steven P. DENBAARS , James S. SPECK , Shuji NAKAMURA , THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Arash Pourhashemi , Robert M. Farrell , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC classification number: H01S5/34333 , H01S5/0217 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/4025 , H01S2304/12
Abstract: A high power blue-violet Ill-nitride semi-polar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.
Abstract translation: 输出功率超过1 W，斜率效率大于1 W / A，外部量子效率（EQE）超过25的高功率蓝紫色III族氮化物半极性激光二极管（LD） ％，更优选超过35％。 这些工作特性使这些激光二极管适用于固态照明系统。
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3.发明申请SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/- 15 DEGREES IN THE C-DIRECTION 审中-公开M-PLANE基板上的半极性III型氮化物光电器件，C型方向的误差小于+/- 15度公开(公告)号：US20150255959A1
公开(公告)日：2015-09-10
申请号：US14721729
申请日：2015-05-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/343 , H01L33/00 , H01L33/16 , H01S5/20 , H01L31/0735 , H01L31/036 , H01L31/0304 , H01S5/32 , H01L33/06 , H01L33/32
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
Abstract translation: 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15
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4.发明申请公开(公告)号：US20200335663A1
公开(公告)日：2020-10-22
申请号：US16075949
申请日：2017-02-06
Applicant: The Regents of the University of California
Inventor： Asad J. Mughal , Stacy J. Kowsz , Robert M. Farrell , Benjamin P. Yonkee , Erin C. Young , Christopher D. Pynn , Tal Margalith , James S. Speck , Shuji Nakamura , Steven P. DenBaars
Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
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公开(公告)号：US10186835B2
公开(公告)日：2019-01-22
申请号：US15107812
申请日：2014-12-30
Applicant: The Regents of the University of California
Inventor： Robert M. Farrell , Shuji Nakamura , Claude C. A. Weisbuch
IPC: H01S5/04 , H01L27/15 , H01L33/46 , H01S5/022 , H01S5/028 , H01S5/32 , H01S5/343 , H01S5/40 , H01L33/00 , H01L33/06 , H01L33/14 , H01L33/18 , H01L33/32 , H01S5/042 , H01S5/10 , H01S5/125 , H01L33/22 , H01S5/20
Abstract: The monolithic integration of optically-pumped and electrically-injected III-nitride light-emitting devices. This structure does not involve the growth of p-type layers after an active region for a first III-nitride light-emitting device, and thus avoids high temperature growth steps after the fabrication of the active region for the first III-nitride light emitting device. Since electrical injection in such a structure cannot be possible, a second III-nitride light-emitting device is used to optically pump the first III-nitride light emitting device. This second III-nitride light emitting device emits light at a shorter wavelength region of the optical spectrum than the first III-nitride light emitting device, so that it can be absorbed by the active region of the first III-nitride light-emitting device, which in turn emits light at a longer wavelength region of the optical spectrum than the second III-nitride light emitting device.
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Patent Agency Ranking
公开(公告)号：US11411137B2
公开(公告)日：2022-08-09
申请号：US16075949
申请日：2017-02-06
Applicant: The Regents of the University of California
Inventor： Asad J. Mughal , Stacy J. Kowsz , Robert M. Farrell , Benjamin P. Yonkee , Erin C. Young , Christopher D. Pynn , Tal Margalith , James S. Speck , Shuji Nakamura , Steven P. DenBaars
Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
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公开(公告)号：US20210104504A1
公开(公告)日：2021-04-08
申请号：US16325709
申请日：2017-08-17
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Benjamin P. Yonkee , Erin C. Young , Charles Forman , John T. Leonard , SeungGeun Lee , Dan Cohen , Robert M. Farrell , Michael Iza , Burhan Saifaddin , Abdullah Almogbel , Humberto Foronda , James S. Speck , Steven P. DenBaars , Shuji Nakamura
Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.
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公开(公告)号：US09917422B2
公开(公告)日：2018-03-13
申请号：US14721729
申请日：2015-05-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/00 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/32 , H01L31/0304 , H01L31/036 , H01L31/0735 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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9.发明申请公开(公告)号：US20180152004A1
公开(公告)日：2018-05-31
申请号：US15880999
申请日：2018-01-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/343 , H01L31/036
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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公开(公告)号：US20160322782A1
公开(公告)日：2016-11-03
申请号：US15107812
申请日：2014-12-30
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Robert M. Farrell , Shuji Nakamura , Claude C.A. Weisbuch
IPC: H01S5/04 , H01L27/15 , H01L33/46 , H01S5/042 , H01S5/40 , H01L33/06 , H01S5/32 , H01L33/00 , H01S5/125 , H01S5/10 , H01L33/14 , H01S5/343 , H01L33/32 , H01L33/18
CPC classification number: H01S5/041 , H01L27/153 , H01L33/0075 , H01L33/06 , H01L33/14 , H01L33/18 , H01L33/22 , H01L33/32 , H01L33/46 , H01L2933/0083 , H01S5/022 , H01S5/0287 , H01S5/042 , H01S5/1003 , H01S5/125 , H01S5/2009 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S5/4025 , H01S5/4043 , H01S5/4093
Abstract: The monolithic integration of optically-pumped and electrically-injected III-nitride light-emitting devices. This structure does not involve the growth of p-type layers after an active region for a first III-nitride light-emitting device, and thus avoids high temperature growth steps after the fabrication of the active region for the first III-nitride light emitting device. Since electrical injection in such a structure cannot be possible, a second III-nitride light-emitting device is used to optically pump the first III-nitride light emitting device. This second III-nitride light emitting device emits light at a shorter wavelength region of the optical spectrum than the first III-nitride light emitting device, so that it can be absorbed by the active region of the first III-nitride light-emitting device, which in turn emits light at a longer wavelength region of the optical spectrum than the second III-nitride light emitting device.
Abstract translation: 光泵浦和电注入的III族氮化物发光器件的单片集成。 这种结构不涉及在用于第一III族氮化物发光器件的有源区域之后的p型层的生长，并且因此在制造用于第一III族氮化物发光器件的有源区域之后避免高温生长步骤 。 由于在这种结构中的电注入是不可能的，所以使用第二III族氮化物发光器件来光学地泵浦第一III族氮化物发光器件。 该第二III族氮化物发光器件在比第一III族氮化物发光器件的光谱的较短波长区域发光，从而可以被第一III族氮化物发光器件的有源区域吸收， 其继而在第二III族氮化物发光器件的光谱的较长波长区域发射光。
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