Invention Application
- Patent Title: MEMORY DEVICE WITH SHARED AMPLIFIER CIRCUITRY
- Patent Title (中): 具有共享放大器电路的存储器件
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Application No.: US14496984Application Date: 2014-09-25
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Publication No.: US20160093341A1Publication Date: 2016-03-31
- Inventor: Syed M. Alam , Thomas Andre
- Applicant: Everspin Technologies, Inc.
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C7/12 ; G11C7/06

Abstract:
In some examples, a memory device may have at least a first and a second memory array. In some cases, a portion of the bit cells of the first memory array may be coupled to first PMOS-follower circuitry and to second PMOS-follower circuitry. A portions of the bit cells of the second memory array may also be coupled to the second PMOS-follower circuitry and to third PMOS-follower circuitry. Additionally, in some cases, the portion of bit cells of both the first memory array and the second memory array may be coupled to shared preamplifier circuitry.
Public/Granted literature
- US10395699B2 Memory device with shared amplifier circuitry Public/Granted day:2019-08-27
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