Provided is a light emitting device. A semiconductor light emitting element with a peak wavelength ranging from 395 nm to 410 nm is used as a light source, light scattering particles made of a material with a band gap of 3.4 eV or more are dispersed in a dispersion medium of a reflection member, and a refractive index of the light scattering particles is larger than a refractive index of the dispersion medium by 0.3 or more. The semiconductor light emitting element has a 1 percentile value ranging from 365 nm to 383 nm in emission integrated intensity.