Apatite crystal
    3.
    发明授权

    公开(公告)号:US09327977B2

    公开(公告)日:2016-05-03

    申请号:US14497553

    申请日:2014-09-26

    Abstract: An apatite crystal is a single crystal expressed by a general formula (M2)5(PO4)3X. In this formula, M2 indicates at least one type of element selected from the group consisting of bivalent alkaline-earth metals and Eu, and X indicates at least one type of element or molecule selected from the group consisting of halogen elements and OH. And the single crystal is of a tubular shape. The outer shape of the apatite may be a hexagonal prism. The shape of an opening of a hole formed in the upper surface or lower surface of the hexagonal prism may be a hexagon.

    Apatite crystal
    6.
    发明授权
    Apatite crystal 有权
    磷灰石水晶

    公开(公告)号:US09371231B2

    公开(公告)日:2016-06-21

    申请号:US14497553

    申请日:2014-09-26

    Abstract: An apatite crystal is a single crystal expressed by a general formula (M2)5(PO4)3X. In this formula, M2 indicates at least one type of element selected from the group consisting of bivalent alkaline-earth metals and Eu, and X indicates at least one type of element or molecule selected from the group consisting of halogen elements and OH. And the single crystal is of a tubular shape. The outer shape of the apatite may be a hexagonal prism. The shape of an opening of a hole formed in the upper surface or lower surface of the hexagonal prism may be a hexagon.

    Abstract translation: 磷灰石晶体是由通式(M2)5(PO4)3X表示的单晶。 在该式中,M2表示选自二价碱土金属和Eu中的至少一种元素,X表示选自卤素元素和OH的至少一种元素或分子。 单晶是管状的。 磷灰石的外形可以是六棱柱。 形成在六边形棱镜的上表面或下表面中的孔的形状可以是六边形。

    LIGHT EMITTING DEVICE
    10.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号:US20160093779A1

    公开(公告)日:2016-03-31

    申请号:US14855713

    申请日:2015-09-16

    Abstract: Provided is a light emitting device. A semiconductor light emitting element with a peak wavelength ranging from 395 nm to 410 nm is used as a light source, light scattering particles made of a material with a band gap of 3.4 eV or more are dispersed in a dispersion medium of a reflection member, and a refractive index of the light scattering particles is larger than a refractive index of the dispersion medium by 0.3 or more. The semiconductor light emitting element has a 1 percentile value ranging from 365 nm to 383 nm in emission integrated intensity.

    Abstract translation: 提供了一种发光装置。 使用峰值波长为395nm〜410nm的半导体发光元件作为光源,由带隙为3.4eV以上的材料制成的光散射粒子分散在反射构件的分散介质中, 并且光散射粒子的折射率大于分散介质的折射率0.3以上。 半导体发光元件的发光集成强度为365nm至383nm的1百分位数值。

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