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    PHOSPHOR AND LIGHT-EMITTING DEVICE
    2.
    发明申请
    PHOSPHOR AND LIGHT-EMITTING DEVICE 审中-公开
    磷光和发光装置

    公开(公告)号：US20150048406A1

    公开(公告)日：2015-02-19

    申请号：US14529788

    申请日：2014-10-31

    申请人： Koito Manufacturing Co., Ltd.

    发明人： Yasutaka SASAKI ,  Hisayoshi Daicho ,  Shinobu Aoyagi ,  Hiroshi Sawa

    IPC分类号： H01L33/50

    CPC分类号： H01L33/504 ,  C09K11/7734 ,  C09K11/7739 ,  H01L33/502 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00011 ,  H01L2924/00012

    摘要： A phosphor has the general formula (M2x,M3y,M4z)mM1O3X(x/n), wherein M1 represents at least one element including at least Si and selected from the group consisting of Si, Ge, Ti, Zr, and Sn, M2 represents at least one element including at least Ca and selected from the group consisting of Ca, Mg, Cd, Co, and Zn, M3 represents at least one element including at least Sr and selected from the group consisting of Sr, Ra, Ba, and Pb, X represents at least one halogen element, M4 represents at least one element including at least Eu2+ and selected from the group consisting of rare-earth elements and Mn, m is in the range 1≦m≦4/3 n is in the range 5≦n≦7, and x, y, and z are each in such a range as to satisfy x+y+z=1, 0.45≦x≦0.8, 0.05≦y≦0.45, and 0.45, and 0.03≦z≦0.35.

    摘要翻译： 荧光体具有通式（M2x，M3y，M4z）mM1O3X（x / n），其中M1表示至少一种至少含有Si的元素，选自Si，Ge，Ti，Zr和Sn，M2 表示至少一种选自Ca，Mg，Cd，Co和Zn中的至少一种元素，M3表示至少一种至少含有Sr的元素，选自Sr，Ra，Ba， Pb，X表示至少一种卤素元素，M4表示至少一种至少含有Eu2 +且选自稀土元素和Mn的元素，m在1＆lt; 1E1的范围内; m＆nlE; 4 / 3n在 范围5＆nlE; n＆nlE; 7和x，y和z分别在满足x + y + z = 1，0.45＆lt; lE; x＆nlE; 0.8,0.05＆nlE; y＆nlE; 0.45和0.45的范围内 0.03＆nlE; z＆nlE; 0.35。

    Semiconductor light-emitting device
    4.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US09406657B2

    公开(公告)日：2016-08-02

    申请号：US14377111

    申请日：2013-01-22

    申请人： KOITO MANUFACTURING CO., LTD.

    发明人： Shogo Sugimori ,  Osamu Kuboyama ,  Hisayoshi Daicho

    IPC分类号： H01L33/62 ,  H01L25/13 ,  H01L33/50 ,  H01L33/58 ,  F21K99/00 ,  H01L25/075 ,  H01L33/54

    CPC分类号： H01L25/13 ,  F21K9/00 ,  H01L25/0753 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light-emitting device has a substrate, one or more semiconductor light-emitting elements provided on the substrate, and that emit light having a peak wavelength in a 380 nm to 480 nm wavelength region, and a molded member covering the semiconductor light-emitting element, and containing a phosphor that emits visible light by being excited by the emitted light from the semiconductor light-emitting element. The molded member is formed so that index A=H/(s/n) satisfies 0.3≦A≦6, where H is the height [mm] of the molded member from the substrate, s is the square root [mm] of the contact area between the substrate and the molded member, and n is the number of the semiconductor light-emitting elements covered with the molded member.

    摘要翻译： 半导体发光装置具有：基板，设置在基板上的一个以上的半导体发光元件，发射波长380nm〜480nm的峰值波长的光，以及覆盖半导体发光元件的成型体， 并且包含通过被来自半导体发光元件的发射光激发而发射可见光的荧光体。 模制件形成为使得指数A = H /（s / n）满足0.3≤A≤6，其中H是模制构件从基底的高度[mm]，s是平均根[mm] 基板和模制构件之间的接触面积，n是被模制构件覆盖的半导体发光元件的数量。

    Light emitting module
    5.
    发明授权
    Light emitting module 有权
    发光模块

    公开(公告)号：US09054280B2

    公开(公告)日：2015-06-09

    申请号：US14203604

    申请日：2014-03-11

    申请人： Koito Manufacturing Co., Ltd.

    发明人： Yuzo Maeno ,  Kazuhiro Ito ,  Osamu Kuboyama ,  Hisayoshi Daicho ,  Shogo Sugimori

    IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L25/075

    CPC分类号： H01L33/50 ,  H01L25/0753 ,  H01L33/504 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a light emitting module, a red phosphor is contained in a second phosphor layer so that the wavelength of a second phosphor layer after the wavelength conversion is longer than that of a first phosphor layer. And a blue phosphor and a yellow-green phosphor are contained in the first phosphor layer. The first phosphor layer is formed in an illumination area of light emitted from an LED chip, and the first phosphor layer converts the wavelength of the light from the LED chip and emits the wavelength-converted light from an emission surface. A part of the second phosphor layer is formed in a non-direct area where no light is illuminated from the LED chip and where light is illuminated from the first phosphor layer. The part of the second phosphor layer formed in the non-direct illumination area converts the wavelength of the light emitted from the first phosphor layer.

    摘要翻译： 在发光模块中，在第二荧光体层中含有红色荧光体，使得波长转换后的第二荧光体层的波长比第一荧光体层的波长长。 并且在第一荧光体层中包含蓝色荧光体和黄绿色荧光体。 第一荧光体层形成在从LED芯片发射的光的照明区域中，并且第一荧光体层转换来自LED芯片的光的波长，并从发射表面发射波长转换的光。 第二荧光体层的一部分形成在从LED芯片没有光照射的非直接区域中，并且从第一荧光体层照射光。 形成在非直接照射区域中的第二荧光体层的部分转换从第一荧光体层发射的光的波长。

    LIGHT EMITTING DEVICE
    8.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20160093779A1

    公开(公告)日：2016-03-31

    申请号：US14855713

    申请日：2015-09-16

    申请人： Koito Manufacturing Co., Ltd.

    发明人： Yuzo Maeno ,  Hisayoshi Daicho ,  Yu Shinomiya

    IPC分类号： H01L33/60 ,  H01L33/50

    CPC分类号： H01L33/60 ,  H01L33/0045 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L2933/0091

    摘要： Provided is a light emitting device. A semiconductor light emitting element with a peak wavelength ranging from 395 nm to 410 nm is used as a light source, light scattering particles made of a material with a band gap of 3.4 eV or more are dispersed in a dispersion medium of a reflection member, and a refractive index of the light scattering particles is larger than a refractive index of the dispersion medium by 0.3 or more. The semiconductor light emitting element has a 1 percentile value ranging from 365 nm to 383 nm in emission integrated intensity.

    摘要翻译： 提供了一种发光装置。 使用峰值波长为395nm〜410nm的半导体发光元件作为光源，由带隙为3.4eV以上的材料制成的光散射粒子分散在反射构件的分散介质中， 并且光散射粒子的折射率大于分散介质的折射率0.3以上。 半导体发光元件的发光集成强度为365nm至383nm的1百分位数值。