Invention Application
- Patent Title: Photo-Induced MSM Stack
- Patent Title (中): 照片诱导的MSM堆栈
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Application No.: US14524801Application Date: 2014-10-27
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Publication No.: US20160118440A1Publication Date: 2016-04-28
- Inventor: Kevin Kashefi , Ashish Bodke , Mark Clark , Prashant B. Phatak , Dipankar Pramanik
- Applicant: Intermolecular, Inc.
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L33/40 ; H01L33/32 ; H01L33/50 ; H01L33/28 ; H01L33/30

Abstract:
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof.
Public/Granted literature
- US09337238B1 Photo-induced MSM stack Public/Granted day:2016-05-10
Information query
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