Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS INCLUDING INDIUM GALLIUM NITRIDE, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND RELATED LIGHT EMITTING DEVICES
- Patent Title (中): 具有包括氮化镓的活性区域的半导体结构，形成这样的半导体结构的方法和相关的发光器件
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Application No.: US14991100Application Date: 2016-01-08
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Publication No.: US20160126410A1Publication Date: 2016-05-05
- Inventor: Jean-Philippe Debray , Chantal Arena , Heather McFavilen , Ding Ding , Li Huang
- Applicant: Soitec
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/32 ; H01L33/14 ; H01L33/00 ; H01L33/12
Abstract:
Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
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