Invention Application
- Patent Title: SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US14920509Application Date: 2015-10-22
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Publication No.: US20160126419A1Publication Date: 2016-05-05
- Inventor: Hyun Seong KUM , Dae Myung CHUN , Ji Hye YEON , Han Kyu SEONG , Jin Sub LEE , Young Jin CHOI , Jae Hyeok HEO
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2014-0151379 20141103
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/24 ; H01L33/08

Abstract:
There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.
Public/Granted literature
- US09595637B2 Nanostructure semiconductor light emitting device having rod and capping layers of differing heights Public/Granted day:2017-03-14
Information query
IPC分类: