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公开(公告)号：US20150194571A1
公开(公告)日：2015-07-09
申请号：US14454536
申请日：2014-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Jung Sub KIM , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN , Young Jin CHOI , Jae Hyeok HEO
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。
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Patent Agency Ranking
2.发明申请公开(公告)号：US20160099376A1
公开(公告)日：2016-04-07
申请号：US14867659
申请日：2015-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hyeok HEO , Jin Sub LEE , Young Jin CHOI , Hyun Seong KUM , Ji Hye YEON , Dae Myung CHUN , Jung Sub KIM , Han Kyu SEONG
CPC classification number: H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
Abstract translation: 根据一个示例性实施例，一种制造纳米结构半导体发光器件的方法包括：将第一导电型氮化物半导体材料的纳米孔彼此间隔开，并形成包含活性层的多层壳， 在每个纳米孔的表面上的第二导电型氮化物半导体层。 通过控制源气体通量，源气体流量，室压力，生长温度和生长速率的至少一个工艺参数来形成多层壳体的至少一部分，从而具有更高的膜厚度 均匀性
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公开(公告)号：US20160300978A1
公开(公告)日：2016-10-13
申请号：US15190406
申请日：2016-06-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Sub KIM , Yeon Woo SEO , Dong Gun LEE , Byung Kyu CHUNG , Dae Myung CHUN , Soo Jeong CHOI
CPC classification number: H01L33/007 , B82Y20/00 , F21K9/232 , F21Y2115/10 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0033 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.
Abstract translation: 纳米结构半导体发光器件包括：由第一导电型氮化物半导体材料形成的基极层; 以及设置在所述基底层上以彼此间隔开的多个发光纳米结构，其中所述多个发光纳米结构中的每一个包括：由第一导电型氮化物半导体材料形成的纳米孔，设置在所述基底层上的有源层 包括纳米孔的表面，并且包括量子阱，其被划分为在其厚度方向上具有不同铟（In）组成比的第一和第二区域; 以及设置在所述有源层上的第二导电型半导体层，并且所述第一区域中的In组成比高于所述第二区域中的In组成比。
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公开(公告)号：US20160190388A1
公开(公告)日：2016-06-30
申请号：US15063150
申请日：2016-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： JIN SUB LEE , Jung Sub KIM , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN , Young Jin CHOI , Jae Hyeok HEO
IPC: H01L33/14 , H01L33/24 , H01L33/02 , H01L33/52 , H01L33/08 , H01L33/42 , H01L33/48 , H01L33/18 , H01L33/00
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
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公开(公告)号：US20160126419A1
公开(公告)日：2016-05-05
申请号：US14920509
申请日：2015-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Seong KUM , Dae Myung CHUN , Ji Hye YEON , Han Kyu SEONG , Jin Sub LEE , Young Jin CHOI , Jae Hyeok HEO
CPC classification number: H01L33/24 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/42 , H01L33/44 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.
Abstract translation: 提供了一种半导体发光器件，其包括由第一导电型半导体材料形成的基底层和设置在基底层上以彼此间隔开的多个发光纳米结构，并且包括第一导电型 半导体芯，有源层和第二导电型半导体层。 第一导电型半导体芯包括从基层向上延伸的棒层，以及设置在棒层上的封盖层。 在多个发光纳米结构的至少一部分中，棒层的高度不同，并且在多个发光纳米结构的至少一部分中，覆盖层的高度不同。
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公开(公告)号：US20150236202A1
公开(公告)日：2015-08-20
申请号：US14516470
申请日：2014-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Myung CHUN , Jung Sub KIM , Jin Sub LEE , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Young Jin Choi , Jae Hyeok HEO
CPC classification number: H01L33/24 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.
Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。
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