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    GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE
    1.
    发明申请
    GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE 有权
    III类硝酸纳米光发光装置

    公开(公告)号：US20140217361A1

    公开(公告)日：2014-08-07

    申请号：US14249002

    申请日：2014-04-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Han Kyu SEONG ,  Hun Jae CHUNG ,  Jung Ja YANG ,  Cheol Soo SONE

    IPC: H01L33/04

    CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  Y10S977/816

    Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.

    Abstract translation: 公开了III族氮化物纳米棒发光器件及其制造方法。 III族氮化物纳米棒发光器件包括：基板，形成在基板上的绝缘膜，并且包括暴露基板的不同直径的部分的多个开口，以及分别形成在第一导电III族氮化物纳米棒 所述多个开口，其中所述第一导电III族氮化物纳米棒中的每一个具有有源层和在其表面上顺序地形成的第二导电半导体层。

    CHIP MOUNTING APPARATUS AND METHOD USING THE SAME
    2.
    发明申请
    CHIP MOUNTING APPARATUS AND METHOD USING THE SAME 审中-公开

    公开(公告)号：US20180374738A1

    公开(公告)日：2018-12-27

    申请号：US15869405

    申请日：2018-01-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin Sub LEE ,  Han Kyu SEONG ,  Yong II KIM ,  Sung Hyun SIM ,  Dong gun LEE

    IPC: H01L21/683 ,  H01L21/66 ,  H01L23/00 ,  H01L21/67 ,  H01L33/00 ,  H01L33/62 ,  H01L25/075

    Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20130313514A1

    公开(公告)日：2013-11-28

    申请号：US13842812

    申请日：2013-03-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung Wook HWANG ,  Geon Wook YOO ,  Nam Goo CHA ,  Jae Hyeok HEO ,  Han Kyu SEONG ,  Hun Jae CHUNG

    IPC: H01L33/16

    CPC classification number: H01L33/16 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y99/00 ,  H01L33/08 ,  H01L33/24 ,  H01L33/38 ,  H01L33/405 ,  Y10S977/762

    Abstract: There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer.

    Abstract translation: 提供了一种半导体发光器件，包括：衬底和在衬底上彼此间隔开的纳米结构。 纳米结构包括第一导电型半导体层芯，有源层和第二导电型半导体层。 填料填充纳米结构之间的空间并形成为低于多个纳米结构。 形成电极以覆盖纳米结构的上部和纳米结构的侧表面的部分并电连接到第二导电型半导体层。

    LIGHT EMITTING DIODE DISPLAY DEVICE
    7.
    发明申请
    LIGHT EMITTING DIODE DISPLAY DEVICE 审中-公开

    公开(公告)号：US20190305202A1

    公开(公告)日：2019-10-03

    申请号：US16356283

    申请日：2019-03-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tan SAKONG ,  Yong Il KIM ,  Han Kyu SEONG ,  Ji Hye YEON ,  Chung Sun LEE ,  Ji Hwan HWANG

    IPC: H01L33/62 ,  H01L25/075 ,  H01L27/12 ,  H01L23/00

    Abstract: A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20150372195A1

    公开(公告)日：2015-12-24

    申请号：US14838430

    申请日：2015-08-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung Wook HWANG ,  Han Kyu SEONG ,  Nam Goo CHA

    IPC: H01L33/24 ,  H01L33/08

    CPC classification number: H01L33/24 ,  H01L33/005 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

    Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

    Abstract translation: 一种半导体发光器件，包括：衬底; 由第一导电型半导体制成的基底层，设置在基板上; 多个纳米尺度的发光单元，其设置在所述基底层的上表面的区域中，并且包括从所述基底层的上表面突出的第一导电型纳米半导体层，设置在所述第一导电性的纳米活性层 型纳米半导体层和设置在纳米活性层上的第二导电型纳米半导体层; 以及设置在基层的上表面的不同区域并具有层叠有源层的发光层叠体。

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