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公开(公告)号：US20150194571A1
公开(公告)日：2015-07-09
申请号：US14454536
申请日：2014-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Jung Sub KIM , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN , Young Jin CHOI , Jae Hyeok HEO
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。
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公开(公告)号：US20170338210A1
公开(公告)日：2017-11-23
申请号：US15386425
申请日：2016-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： YONG IL KIM , Wan Tae LIM , Young Jin CHOI , Sung Hyun SIM
CPC classification number: H01L25/167 , H01L27/124 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号：US20160190388A1
公开(公告)日：2016-06-30
申请号：US15063150
申请日：2016-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： JIN SUB LEE , Jung Sub KIM , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN , Young Jin CHOI , Jae Hyeok HEO
IPC: H01L33/14 , H01L33/24 , H01L33/02 , H01L33/52 , H01L33/08 , H01L33/42 , H01L33/48 , H01L33/18 , H01L33/00
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
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Patent Agency Ranking
公开(公告)号：US20160126419A1
公开(公告)日：2016-05-05
申请号：US14920509
申请日：2015-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Seong KUM , Dae Myung CHUN , Ji Hye YEON , Han Kyu SEONG , Jin Sub LEE , Young Jin CHOI , Jae Hyeok HEO
CPC classification number: H01L33/24 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/42 , H01L33/44 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.
Abstract translation: 提供了一种半导体发光器件，其包括由第一导电型半导体材料形成的基底层和设置在基底层上以彼此间隔开的多个发光纳米结构，并且包括第一导电型 半导体芯，有源层和第二导电型半导体层。 第一导电型半导体芯包括从基层向上延伸的棒层，以及设置在棒层上的封盖层。 在多个发光纳米结构的至少一部分中，棒层的高度不同，并且在多个发光纳米结构的至少一部分中，覆盖层的高度不同。
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公开(公告)号：US20190181316A1
公开(公告)日：2019-06-13
申请号：US16020071
申请日：2018-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hye Seok NOH , Young Jin CHOI , Yong Il KIM , Han Kyu SEONG , Dong Gun LEE , Jin Sub LEE
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/156 , H01L33/0095 , H01L33/26 , H01L33/40 , H01L33/504 , H01L33/507 , H01L33/56 , H01L2933/005 , H04N5/2256
Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.
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公开(公告)号：US20180269192A1
公开(公告)日：2018-09-20
申请号：US15971196
申请日：2018-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： YONG IL KIM , Wan Tae LIM , Young Jin CHOI , Sung Hyun SIM
CPC classification number: H01L25/167 , H01L27/124 , H01L27/15 , H01L27/153 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号：US20180068991A1
公开(公告)日：2018-03-08
申请号：US15802493
申请日：2017-11-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： YONG IL KIM , Wan Tae LIM , Young Jin CHOI , Sung Hyun SIM
CPC classification number: H01L25/167 , H01L27/124 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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8.发明申请公开(公告)号：US20160099376A1
公开(公告)日：2016-04-07
申请号：US14867659
申请日：2015-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hyeok HEO , Jin Sub LEE , Young Jin CHOI , Hyun Seong KUM , Ji Hye YEON , Dae Myung CHUN , Jung Sub KIM , Han Kyu SEONG
CPC classification number: H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
Abstract translation: 根据一个示例性实施例，一种制造纳米结构半导体发光器件的方法包括：将第一导电型氮化物半导体材料的纳米孔彼此间隔开，并形成包含活性层的多层壳， 在每个纳米孔的表面上的第二导电型氮化物半导体层。 通过控制源气体通量，源气体流量，室压力，生长温度和生长速率的至少一个工艺参数来形成多层壳体的至少一部分，从而具有更高的膜厚度 均匀性
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