发明申请
- 专利标题： POLISHING LIQUID FOR CMP, AND POLISHING METHOD
- 专利标题（中）： 抛光液用于CMP和抛光方法
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申请号： US14897771申请日： 2014-04-28
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公开(公告)号： US20160137881A1公开(公告)日： 2016-05-19
- 发明人: Munehiro OOTA , Toshio TAKIZAWA , Hisataka MINAMI , Toshiaki AKUTSU , Tomohiro IWANO
- 申请人： HITACHI CHEMICAL COMPANY, LTD.
- 优先权： JP2013-123824 20130612
- 国际申请： PCT/JP2014/061847 WO 20140428
- 主分类号： C09G1/02
- IPC分类号： C09G1/02 ; B24B37/04
摘要：
A polishing liquid for CMP, comprising: an abrasive grain including a cerium-based compound; a 4-pyrone-based compound; a polymer compound having an aromatic ring and a polyoxyalkylene chain; a cationic polymer; and water.
公开/授权文献
- US10155886B2 Polishing liquid for CMP, and polishing method 公开/授权日：2018-12-18
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