SLURRY, POLISHING SOLUTION SET, POLISHING SOLUTION, SUBSTRATE POLISHING METHOD, AND SUBSTRATE
    3.
    发明申请
    SLURRY, POLISHING SOLUTION SET, POLISHING SOLUTION, SUBSTRATE POLISHING METHOD, AND SUBSTRATE 审中-公开
    浆料,抛光溶液组,抛光溶液,底层抛光方法和基材

    公开(公告)号:US20160280961A1

    公开(公告)日:2016-09-29

    申请号:US14914898

    申请日:2014-08-26

    发明人: Tomohiro IWANO

    IPC分类号: C09G1/02 B24B37/04

    摘要: A polishing liquid comprising abrasive grains, an additive, and water, wherein the abrasive grains include a hydroxide of a tetravalent metal element, produce absorbance of 1.00 or more for light having a wavelength of 400 nm in a first aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %, and produce light transmittance of 50%/cm or more for light having a wavelength of 500 nm in the first aqueous dispersion, and a NO3− concentration of a second aqueous dispersion obtained by retaining the first aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.

    摘要翻译: 包含磨粒,添加剂和水的抛光液,其中所述磨粒包括四价金属元素的氢氧化物,对于具有400nm波长的第一含水分散体,对波长为400nm的光产生1.00或更高的吸光度 磨粒调节至1.0质量%,并且在第一水分散体中产生具有500nm波长的光的光透射率为50%/ cm以上,并且通过将第一水分散体 在60℃下72小时为200ppm以下。

    SLURRY, POLISHING-LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE
    4.
    发明申请
    SLURRY, POLISHING-LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE 审中-公开
    浆料,抛光液装置,抛光液,抛​​光底材的方法和基材

    公开(公告)号:US20160222252A1

    公开(公告)日:2016-08-04

    申请号:US14917903

    申请日:2014-07-01

    IPC分类号: C09G1/02 H01L21/3105

    摘要: A polishing liquid comprises: abrasive grains; a compound having an aromatic heterocycle; an additive (excluding the compound having an aromatic heterocycle); and water, wherein: the abrasive grains include a hydroxide of a tetravalent metal element; the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom; and a charge of the endocyclic nitrogen atom obtained by using the Merz-Kollman method is −0.45 or less.

    摘要翻译: 抛光液包括:磨粒; 具有芳族杂环的化合物; 添加剂(不包括具有芳族杂环的化合物); 和水,其中:磨粒包括四价金属元素的氢氧化物; 芳族杂环具有未与氢原子结合的环状氮原子; 通过使用Merz-Kollman法得到的内环氮原子的电荷为-0.45以下。

    SLURRY AND POLISHING METHOD
    6.
    发明申请

    公开(公告)号:US20210207002A1

    公开(公告)日:2021-07-08

    申请号:US16497512

    申请日:2017-03-27

    发明人: Tomohiro IWANO

    IPC分类号: C09G1/02 H01L21/321

    摘要: A slurry containing abrasive grains and a liquid medium, the abrasive grains including first particles and second particles being in contact with the first particles, the first particles containing ceria, the first particles having a negative zeta potential, the second particles containing a hydroxide of a tetravalent metal element, and the second particles having a positive zeta potential.

    SLURRY, SLURRY SET AND POLISHING METHOD

    公开(公告)号:US20210071037A1

    公开(公告)日:2021-03-11

    申请号:US16981573

    申请日:2019-03-20

    IPC分类号: C09G1/02 H01L21/3105

    摘要: According to an aspect of the present invention, there is provided a polishing liquid containing abrasive grains, a hydroxy acid, a polyol, at least one zwitterionic compound selected from the group consisting of an aminocarboxylic acid and an aminosulfonic acid, and a liquid medium, in which a zeta potential of the abrasive grains is positive, an isoelectric point of the aminocarboxylic acid is smaller than 7.0, and pKa of the aminosulfonic acid is larger than 0.

    POLISHING SOLUTION AND POLISHING METHOD
    8.
    发明申请

    公开(公告)号:US20200369917A1

    公开(公告)日:2020-11-26

    申请号:US16636816

    申请日:2017-08-09

    IPC分类号: C09G1/02 B24B37/04

    摘要: Polishing liquid comprising abrasive grains, a phosphonic acid compound having a molecular weight of 210 or more, and at least one selected from the group consisting of amino acids and amino acid derivatives, in which a silanol group density of the abrasive grains is 6.5 groups/nm2 or less, and a degree of association of the abrasive grains is 1.5 or more.