Invention Application
US20160163604A1 METHODS OF FORMING DIFFUSION BREAKS ON INTEGRATED CIRCUIT PRODUCTS COMPRISED OF FINFET DEVICES AND THE RESULTING PRODUCTS
有权
在FINFET器件和结果产品所包含的集成电路产品上形成扩散断裂的方法
- Patent Title: METHODS OF FORMING DIFFUSION BREAKS ON INTEGRATED CIRCUIT PRODUCTS COMPRISED OF FINFET DEVICES AND THE RESULTING PRODUCTS
- Patent Title (中): 在FINFET器件和结果产品所包含的集成电路产品上形成扩散断裂的方法
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Application No.: US14674924Application Date: 2015-03-31
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Publication No.: US20160163604A1Publication Date: 2016-06-09
- Inventor: Ruilong Xie , Min Gyu Sung , Ryan Ryoung-Han Kim , Kwan-Yong Lim , Chanro Park
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/66
Abstract:
One illustrative method disclosed herein includes forming first sacrificial gate structures above a fin for two active gates and a dummy gate, removing the first sacrificial gate structure for the dummy gate so as to define a cavity that exposes the fin while leaving the first sacrificial gate structures for the two active gates intact, etching through the cavity to form a trench in the fin under the cavity, forming a second sacrificial gate structure for the dummy gate, removing the first sacrificial gate structures for the two active gates and the second sacrificial gate structure for the dummy gate so as to define a replacement gate cavity for the two active gates and the dummy gate, and forming a replacement gate structure in each of the replacement gate cavities, wherein the replacement gate structure for the dummy gate extends into the trench in the fin.
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