Invention Application
- Patent Title: MEMORY WITH MULTIPLE WRITE PORTS
- Patent Title (中): 内存多个写入口
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Application No.: US14581229Application Date: 2014-12-23
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Publication No.: US20160180896A1Publication Date: 2016-06-23
- Inventor: Gus YEUNG , Fakhruddin Ali BOHRA , Mudit BHARGAVA , Andy Wangkun CHEN , Yew Keong CHONG
- Applicant: ARM Limited
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22 ; G11C7/12

Abstract:
A memory 2 includes a regular array of storage elements 4. A regular array of write multiplexers 8 is provided outside of the regular array of storage elements 4. The storage element pitch is matched to the write multiplexer pitch. The write multiplexers 10 support a plurality of write ports. When forming a memory design 2, a given instance of an array of write multiplexers 8 may be selected in dependence upon the desired number of write ports to support and this combined with a common form of storage element array 4.
Public/Granted literature
- US09721624B2 Memory with multiple write ports Public/Granted day:2017-08-01
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