Invention Application
US20160185592A1 Method of Selectively Removing an Anti-Stiction Layer on a Eutectic Bonding Area
审中-公开
选择性地去除共晶接合区域上的抗静电层的方法
- Patent Title: Method of Selectively Removing an Anti-Stiction Layer on a Eutectic Bonding Area
- Patent Title (中): 选择性地去除共晶接合区域上的抗静电层的方法
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Application No.: US14583269Application Date: 2014-12-26
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Publication No.: US20160185592A1Publication Date: 2016-06-30
- Inventor: Yuan-Chih Hsieh , Hung-Hua Lin , Wen-Chuan Tai , Hsiang-Fu Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: B81B7/00
- IPC: B81B7/00 ; C23C16/50 ; B81C99/00 ; C23C16/04 ; B81B3/00 ; B81C1/00

Abstract:
A microelectromechanical systems (MEMS) package includes a eutectic bonding structure free of a native oxide layer and an anti-stiction layer, while also including a MEMS device having a top surface and sidewalls lined with the anti-stiction layer. The MEMS device is arranged within a MEMS substrate having a first eutectic bonding substructure arranged thereon. A cap substrate having a second eutectic bonding substructure arranged thereon is eutectically bonded to the MEMS substrate with a eutectic bond at the interface of the first and second eutectic bonding substructures. The anti-stiction layer lines a top surface and sidewalls of the MEMS device, but not the first and second eutectic bonding substructures. A method for manufacturing the MEMS package and a process system for selective plasma treatment are also provided.
Public/Granted literature
- US10053361B2 Method of selectively removing an anti-stiction layer on a eutectic bonding area Public/Granted day:2018-08-21
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