Invention Application
US20160185592A1 Method of Selectively Removing an Anti-Stiction Layer on a Eutectic Bonding Area 审中-公开
选择性地去除共晶接合区域上的抗静电层的方法

Method of Selectively Removing an Anti-Stiction Layer on a Eutectic Bonding Area
Abstract:
A microelectromechanical systems (MEMS) package includes a eutectic bonding structure free of a native oxide layer and an anti-stiction layer, while also including a MEMS device having a top surface and sidewalls lined with the anti-stiction layer. The MEMS device is arranged within a MEMS substrate having a first eutectic bonding substructure arranged thereon. A cap substrate having a second eutectic bonding substructure arranged thereon is eutectically bonded to the MEMS substrate with a eutectic bond at the interface of the first and second eutectic bonding substructures. The anti-stiction layer lines a top surface and sidewalls of the MEMS device, but not the first and second eutectic bonding substructures. A method for manufacturing the MEMS package and a process system for selective plasma treatment are also provided.
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