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    Method to protect electrodes from oxidation in a MEMS device
    1.
    发明授权
    Method to protect electrodes from oxidation in a MEMS device 有权

    公开(公告)号：US11050012B2

    公开(公告)日：2021-06-29

    申请号：US16371421

    申请日：2019-04-01

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Yi-Ren Wang ,  Hung-Hua Lin ,  Yuan-Chih Hsieh

    IPC分类号： H01L41/29 ,  B81C1/00 ,  B81B3/00 ,  H01L41/047

    摘要： In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.

    Transfer module for bowed wafers
    4.
    发明授权
    Transfer module for bowed wafers 有权
    用于鞠躬的转移模块

    公开(公告)号：US09355882B2

    公开(公告)日：2016-05-31

    申请号：US14096217

    申请日：2013-12-04

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Ming-Tung Wu ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chia-Shiung Tsai

    IPC分类号： H01L21/683 ,  B24B37/34 ,  H01L21/687 ,  B24B37/30 ,  B24B41/00 ,  H01L21/67

    CPC分类号： H01L21/6838 ,  B24B37/30 ,  B24B37/345 ,  B24B41/005 ,  H01L21/67288 ,  H01L21/68707 ,  H01L21/68764 ,  H01L21/68771

    摘要： A wafer grinding system includes a robot arm having a suction board at one end and a table within reach of the robot arm. An upper surface of the table has a vacuum surface for sucking and holding wafers. A pusher coupled to the robot arm extends about the periphery of the suction board. The pusher flattens wafers against the upper surface of the table, allowing the table to hold by suction wafers that would otherwise be too bowed to be held in that way. Additionally, a table can have a vacuum area that is small in comparison to the wafers, which is another way of increasing the magnitude of wafer bow that can be tolerated. A grinding system can use the reduced vacuum area concept to allow the positioning table to hold bowed wafers and the pusher concept to allow the chuck tables to hold bowed wafers.

    摘要翻译： 晶片研磨系统包括机器人臂，其在一端具有吸引板，在机器人手臂的范围内具有桌子。 桌子的上表面具有用于吸取和保持晶片的真空表面。 联接到机器人臂的推动器围绕吸板的周边延伸。 推动器使晶片抵靠桌子的上表面平坦化，从而允许桌子由吸着的晶片保持，否则将被太鞠躬不能以这种方式保持。 此外，桌子可以具有与晶片相比较小的真空区域，这是增加可以容忍的晶片弓的大小的另一种方式。 研磨系统可以使用减小的真空区域概念来允许定位台保持弓形晶片和推动器概念，以允许卡盘台保持弯曲的晶片。

    Noble gas bombardment to reduce scallops in bosch etching
    5.
    发明授权
    Noble gas bombardment to reduce scallops in bosch etching 有权
    贵族气体轰炸以减少波纹蚀刻中的扇贝

    公开(公告)号：US09224615B2

    公开(公告)日：2015-12-29

    申请号：US14023563

    申请日：2013-09-11

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Che-Ming Chang ,  Lee-Chuan Tseng ,  Shih-Wei Lin ,  Chih-Jen Chan ,  Yuan-Chih Hsieh ,  Ming Chyi Liu ,  Chung-Yen Chou

    IPC分类号： H01L21/265 ,  H01L21/3065 ,  H01L27/00 ,  H01L21/263

    CPC分类号： H01L21/30655 ,  H01L21/2633 ,  H01L21/3065 ,  H01L27/00

    摘要： A method of etching a trench in a substrate is provided. The method repeatedly alternates between using a fluorine-based plasma to etch a trench, which has trench sidewalls, into a selected region of the substrate; and using a fluorocarbon plasma to deposit a liner on the trench sidewalls. The liner, when formed and subsequently etched, has an exposed sidewall surface that includes scalloped recesses. The trench, which includes the scalloped recesses, is then bombarded with a molecular beam where the molecules are directed on an axis parallel to the trench sidewalls to reduce the scalloped recesses.

    摘要翻译： 提供了蚀刻衬底中的沟槽的方法。 该方法在使用氟基等离子体之间重复地交替，以将具有沟槽侧壁的沟槽蚀刻到衬底的选定区域中; 以及使用氟碳等离子体将衬垫沉积在沟槽侧壁上。 衬里当形成并随后被蚀刻时具有包括扇形凹槽的暴露的侧壁表面。 包括扇形凹槽的沟槽然后用分子束轰击，其中分子被引导在平行于沟槽侧壁的轴上以减少扇形凹部。

    METHOD TO PROTECT ELECTRODES FROM OXIDATION IN A MEMS DEVICE
    6.
    发明申请
    METHOD TO PROTECT ELECTRODES FROM OXIDATION IN A MEMS DEVICE 有权

    公开(公告)号：US20210265557A1

    公开(公告)日：2021-08-26

    申请号：US17319628

    申请日：2021-05-13

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Yi-Ren Wang ,  Hung-Hua Lin ,  Yuan-Chih Hsieh

    IPC分类号： H01L41/29 ,  B81C1/00 ,  B81B3/00 ,  H01L41/047

    摘要： In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.

    SEGMENTED PEDESTAL FOR MOUNTING DEVICE ON CHIP
    7.
    发明申请
    SEGMENTED PEDESTAL FOR MOUNTING DEVICE ON CHIP 审中-公开

    公开(公告)号：US20200369515A1

    公开(公告)日：2020-11-26

    申请号：US16419314

    申请日：2019-05-22

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Lee-Chuan Tseng ,  Yuan-Chih Hsieh

    IPC分类号： B81B7/02 ,  B81C1/00

    摘要： A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

    WAFER LEVEL HERMETIC SEAL PROCESS FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES
    10.
    发明申请
    WAFER LEVEL HERMETIC SEAL PROCESS FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES 有权
    用于微电子系统（MEMS）器件的WAFER LEVEL HERMETIC SEAL PROCESS

    公开(公告)号：US20160355394A1

    公开(公告)日：2016-12-08

    申请号：US14729456

    申请日：2015-06-03

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Lee-Chuan Tseng ,  Chung-Yen Chou ,  Shih-Chang Liu ,  Yuan-Chih Hsieh

    IPC分类号： B81B7/00 ,  B81C3/00

    CPC分类号： B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2207/012 ,  B81C1/00293 ,  B81C3/001 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/019

    摘要： A microelectromechanical systems (MEMS) structure with a cavity hermetically sealed using a mask layer is provided. A capping substrate is arranged over a MEMS substrate, which includes a movable element. The capping substrate includes the cavity arranged over and opening to the movable element, and includes a seal opening in fluid communication with the cavity. The mask layer is arranged over the capping substrate. The mask layer overhangs the seal opening and laterally surrounds a mask opening arranged over the seal opening. A seal layer is arranged over the mask layer and the mask opening. The seal layer is configured to hermetically seal the cavity. A method for manufacturing the MEMS structure is also provided.

    摘要翻译： 提供具有使用掩模层密封的腔的微机电系统（MEMS）结构。 封装衬底布置在MEMS衬底上，其包括可移动元件。 封盖基板包括布置在可移动元件上方并且向可移动元件开口的空腔，并且包括与空腔流体连通的密封开口。 掩模层设置在封盖基板上。 掩模层突出于密封开口并横向包围布置在密封开口上方的掩模开口。 密封层布置在掩模层和掩模开口上方。 密封层构造成气密地密封空腔。 还提供了一种用于制造MEMS结构的方法。