发明申请
- 专利标题： METHOD FOR FABRICATING SINGLE-CRYSTALLINE NIOBIUM OXYNITRIDE FILM AND METHOD FOR GENERATING HYDROGEN USING SINGLE-CRYSTALLINE NIOBIUM OXYNITRIDE FILM
- 专利标题（中）： 用于制造单晶氮氧化镍薄膜的方法和使用单晶氮氧化镍薄膜生成氢的方法
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申请号： US15075226申请日： 2016-03-21
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公开(公告)号： US20160201218A1公开(公告)日： 2016-07-14
- 发明人: RYOSUKE KIKUCHI , TAKAIKI NOMURA , KAZUHITO HATO , SATORU TAMURA , TAKAHIRO KURABUCHI
- 申请人： Panasonic Intellectual Property Management Co., Ltd.
- 优先权： JP2014-231832 20141114
- 主分类号： C30B25/06
- IPC分类号： C30B25/06 ; C25B1/04 ; C25B11/04 ; C30B29/38 ; C23C14/06 ; C23C14/00 ; C30B29/16 ; C25B1/00 ; H01G9/20
摘要：
The present invention provides a method for fabricating a single-crystalline niobium oxynitride film suitable for a hydrogen generation device. The present invention provides a method for fabricating a single-crystalline niobium oxynitride film formed of a niobium oxynitride represented by the chemical formula NbON; the method comprising: (a) epitaxially growing the single-crystalline niobium oxynitride film on one substrate selected from the group consisting of a yttria-stabilized zirconia substrate, a titanium oxide substrate, and a yttrium-aluminum complex oxide substrate.