SOLAR CELL
    1.
    发明申请

    公开(公告)号:US20220416099A1

    公开(公告)日:2022-12-29

    申请号:US17821818

    申请日:2022-08-24

    IPC分类号: H01L31/0224 H01L31/0264

    摘要: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10−7 S/cm.

    SOLAR CELL
    2.
    发明申请

    公开(公告)号:US20220013303A1

    公开(公告)日:2022-01-13

    申请号:US17483637

    申请日:2021-09-23

    IPC分类号: H01G9/20

    摘要: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

    SEMICONDUCTOR PHOTOELECTRODE, PHOTOELECTROCHEMICAL CELL, HYDROGEN GENERATION METHOD, AND ENERGY SYSTEM
    4.
    发明申请
    SEMICONDUCTOR PHOTOELECTRODE, PHOTOELECTROCHEMICAL CELL, HYDROGEN GENERATION METHOD, AND ENERGY SYSTEM 有权
    半导体光电子,光电化学电池,氢生成方法和能量系统

    公开(公告)号:US20150111119A1

    公开(公告)日:2015-04-23

    申请号:US14509361

    申请日:2014-10-08

    摘要: Provided is a semiconductor photoelectrode comprising a first conductive layer; a first n-type semiconductor layer disposed on the first conductive layer; and a second conductive layer covering the first n-type semiconductor layer. The first n-type semiconductor layer has a first n-type surface region and a second n-type surface region. The first n-type surface region is in contact with the first conductive layer. The second n-type surface region is in contact with the second conductive layer. The first n-type semiconductor layer is formed of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. The second conductive layer is light-transmissive. The second conductive layer is formed of a p-type oxide conductor.

    摘要翻译: 提供了包括第一导电层的半导体光电极; 设置在所述第一导电层上的第一n型半导体层; 以及覆盖所述第一n型半导体层的第二导电层。 第一n型半导体层具有第一n型表面区域和第二n型表面区域。 第一n型表面区域与第一导电层接触。 第二n型表面区域与第二导电层接触。 第一n型半导体层由选自氮化物半导体和氧氮化物半导体的至少一种形成。 第二导电层是透光的。 第二导电层由p型氧化物导体形成。